Related papers: Development of high power quantum well lasers at R…
Room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001) has been demonstrated. A 420 nm thick GaAs epilayer completely free of antiphase domains was initially grown on the…
Operation of semiconductor lasers in the 20--50 $\mu$m wavelength range is hindered by strong non-radiative recombination in the interband laser diodes, and strong lattice absorption in GaAs-based quantum cascade structures. Here, we…
Planar light-emitting diodes (LEDs) fabricated within a single high-mobility quantum well are demonstrated. Our approach leads to a dramatic reduction of radiative lifetime and junction area with respect to conventional vertical LEDs,…
Coherent laser arrays compatible with silicon photonics are demonstrated in a waveguide geometry in epitaxially grown semiconductor membrane quantum well lasers transferred on substrates of silicon carbide and oxidised silicon; we record…
In this work we study a possibility of waveguide fabrication on the basis of active quantum wells in semiconductor lasers. The efficiency of such a waveguide for an InP structure with In0.53Ga0.47As quantum wells is demonstrated…
Due to their high optical phonon energies GaInP/AlGaInP heterostructures are a promising active medium to solve the problem of creating compact semiconductor sources with an operating frequency range of 5.5-7 THz. In this work, the…
External-cavity diode lasers are ubiquitous in atomic physics and a wide variety of other scientific disciplines, due to their excellent affordability, coherence length and versatility. However, for higher power applications, the…
High performance of InP-based quantum cascade lasers emitting at $\lambda$ ~ 9$\mu$m are reported. Thick electroplated gold layer was deposited on top of the laser to improve heat dissipation. With one facet high reflection coated, the…
We design and fabricate large-area (1.1 mm $\times$ 1.1 mm) photonic crystal quantum cascade lasers, enabling single-mode (wavelength $\sim$ 8.5 $\mu$m) surface emission at room temperature, with a maximum peak power up to 176 mW. The beam…
Silicon photonics is a rapidly developing technology that promises to revolutionize the way we communicate, compute, and sense the world. However, the lack of highly scalable, native CMOS-integrated light sources is one of the main factors…
A laser with an active volume consisting of only a single quantum wire in the 1-dimensional (1-D) ground state is demonstrated. The single wire is formed quantum-mechanically at the T-intersection of a 14 nm Al_{0.07}Ga_{0.93}As quantum…
Electrically-pumped lasers directly grown on silicon are key devices interfacing silicon microelectronics and photonics. We report here, for the first time, an electrically-pumped, room-temperature, continuous-wave (CW) and single-mode…
We demonstrate an injection-locked 399 nm laser system with up to 1 W output power and a locked power fraction of 0.57. The system consists of a high power, multimode diode laser that is seeded by 5 mW from a single-mode external cavity…
A holmium-doped yttrium aluminum garnet (Ho:YAG) thin-disk was experimentally investigated under Q-switching and cavity-dumping operation schemes, pumped by a 1.9 $\mu$m laser-diode (LD). The laser generated pulses at 2090 nm with energies…
Low cost, small footprint, highly efficient and mass producible on-chip wavelength-division-multiplexing (WDM) light sources are key components in future silicon electronic and photonic integrated circuits (EPICs) which can fulfill the…
We present a mode-locked semiconductor laser oscillator that emits few picosecond pulses (5-8ps at 379MHz repetition) with record peak power (112W) and pulse energy (0.5nJ) directly out of the oscillator (with no amplifier). To achieve this…
We analyze internal device physics, performance limitations, and optimization options for a unique laser design with multiple active regions separated by tunnel junctions, featuring surprisingly wide quantum wells. Contrary to common…
Recently there is an increasing attention to electrically pumped room temperature sub-wavelength plasmon sources because of their various potential applications mainly in the integrated plasmonic field. In this paper, a GaAs/AlGaAs quantum…
Terahertz quantum cascade lasers based on InGaAs wells and quaternary AlInGaAs barriers were measured in magnetic field. This study was carried out on a four quantum well active region design with photon energy of 14.3 meV processed both…
We describe an efficient laser emission from a directly grown Er3+:YAG single-crystal fiber that is resonantly pumped using a continuous-wave (CW) laser diode at 1532 nm. In a longitudinal pumping, it emits 12.5 W at 1645 nm with a slope…