Related papers: Towards high mobility InSb nanowire devices
Electrical conductance through InAs nanowires is relevant for electronic applications as well as for fundamental quantum experiments. Here we employ nominally undoped, slightly tapered InAs nanowires to study the diameter dependence of…
The ultimate limitations on carrier mobilities in metal dichalcogenides, and the dynamics associated with carrier relaxation, are unclear. We present measurements of the frequency-dependent conductivity of multilayer dichalcogenide MoS2 by…
We use magnetoconductance measurements in dual-gated InSb nanowire devices together with a theoretical analysis of weak antilocalization to accurately extract spin-orbit strength. In particular, we show that magnetoconductance in our…
Electronic transport in monolayer MoS2 is significantly constrained by several extrinsic factors despite showing good prospects as a transistor channel material. Our paper aims to unveil the underlying mechanisms of the electrical and…
Future of silicon-based microelectronics relies on solving the heat dissipation problem. A solution may lie in a nanoscale phenomenon known as ballistic heat conduction, which implies heat conduction without heating the conductor. But,…
We have simultaneously measured conductance and thermoelectric power (TEP) of individual silicon and germanium/silicon core/shell nanowires in the field effect transistor device configuration. As the applied gate voltage changes, the TEP…
Two-probe electronic transport measurements on a Molybdenum Disulphide (MoS_2) surface were performed at low temperature (30K) under ultra-high vacuum conditions. Two scanning tunneling microscope tips were precisely positioned in tunneling…
We study thermal transport through Pt nanowires that bridge planar contacts as a function of wire length and vibrational frequency of the contacts. When phonons in the contacts have lower average frequencies than those in the wires thermal…
We report low-temperature electronic transport measurements performed in two multi-terminal Corbino samples formed in GaAs/Al-GaAs two-dimensional electron gases (2DEG) with both ultra-high electron mobility ($\gtrsim 20\times 10^6$…
We study electronic transport properties of ferromagnetic nanoparticle arrays and nanodomain materials near the Curie temperature in the limit of weak coupling between the grains. We calculate the conductivity in the Ohmic and non-Ohmic…
A model for the extraction of the charge density dependent mobility and variable contact resistance in thin film transistors is proposed by performing a full derivation of the current-voltage characteristics both in the linear and…
We present a detailed study of the charge transport, optical reflectivity, and thermal transport properties of n-type PbSe crystals. A strong scattering, mobility-limiting mechanism was revealed to be at play at temperatures above 500 K.…
We consider electronic transport through a suspended voltage-biased nanowire. By coupling the tunneling current to a transverse magnetic field, vibrational modes of the wire are excited which influences the current-voltage characteristics…
Making use of focused Ga-ion beam (FIB) fabrication technology, the evolution with device dimension of the low-temperature electrical properties of Nb nanowires has been examined in a regime where crossover from Josephson-like to insulating…
We show that by combining high-k dielectric substrate and high density of charge carriers, Coulomb impurity can be effectively screened, leading to an unprecedented room-temperature mobility of ~150cm2/Vs in monolayer MoS2. The high sample…
We study hysteretic magnetoresistance in InSb nanowires due to stray magnetic fields from CoFe micromagnets. Devices without any ferromagnetic components show that the magnetoresistance of InSb nanowires commonly exhibits either a local…
The mobility of electrons and holes in silicon depends on many parameters. Two of them are the electric field and the temperature. It has been observed previously that the mobility in the transition region between ohmic transport and…
High mobility InSb quantum wells with tunable carrier densities are investigated by transport experiments in magnetic fields tilted with respect to the sample normal. We employ the coincidence method and the temperature dependence of the…
We have measured the conductivity of high-mobility (001) Si metal-oxide-semiconductor field effect transistors (MOSFETs) over wide ranges of electron densities n=(1.8-15)x10^11cm^2, temperatures T=30mK-4.2K, and in-plane magnetic fields…
The performance of silicon nano-devices at cryogenic temperatures is critical for quantum qubit control circuits and space applications. Using multi-valley Monte Carlo simulations, we investigate electron transport in Si~(110) systems. At…