Related papers: Avalanche photodiodes based on MoS2/Si heterojunct…

A backside-illuminated (BSI) near-infrared enhanced silicon single-photon avalanche diode (SPAD) for time-of-flight (ToF) light detection and ranging applications is presented. The detector contains a 2 $\mu$m wide multiplication region…

Detectors with an electroluminesence readout show an excellence performance in respect of energy resolution making them interesting for various applications as X-ray detection, double beta and dark matter experiments, Compton and gamma…

We present an analog silicon photomultiplier (SiPM) based on a standard 55 nm Bipolar-CMOS-DMOS (BCD) technology. The SiPM is composed of 16$\times$16 single-photon avalanche diodes (SPADs) and measures 0.29$\times$0.32 mm$^2$. Each SPAD…

Afterpulsing noise in InGaAs/InP single photon avalanche photodiodes (APDs) is caused by carrier trapping and can be suppressed successfully through limiting the avalanche charge via sub-nanosecond gating. Detection of faint avalanches…

In this work, we present a capacitively coupled GaAs p +-i-n/substrate photodetector (CC-GaAs PIN/S PD), which also represents a preliminary step toward 3D detection (x, y, time) of high-energy X-ray pulses. Although the final 3D detector…

We present an InGaAs/InP avalanche photodiode with an active quenching circuit on an ASIC (application specific integrated circuit) that is capable of operating in both gated and free-running modes. The 1.6mm2 ASIC chip is fabricated using…

The p-n diodes represent the most fundamental device building block for diverse optoelectronic functions, but are difficult to achieve in atomically thin transition metal dichalcogenides (TMDs) due to the inability to selectively dope them…

Single-photon avalanche detectors (SPADs) are crucial sensors of light for many fields and applications. However, they are not able to resolve photon number, so typically more complex and more expensive experimental setups or devices must…

We present a Photon-Assisted Cascaded Electron Multipliers (PACEM) which has a potential for ion back-flow blocking in gaseous radiation detectors: the avalanche from a first multiplication stage propagates to the successive one via its…

Two-dimensional (2D) materials have attracted substantial attention in electronic and optoelectronic applications with superior advantages of being flexible, transparent and highly tunable. Gapless graphene exhibits ultra-broadband and fast…

Photodetectors based on two-dimensional (2D) atomically thin semiconductors suffer from low light absorption, limiting their potential for practical applications. In this work, we demonstrate a high-performance MoS2 phototransistors by…

Two dimensional material/semiconductor heterostructures offer alternative platforms for optoelectronic devices other than conventional Schottky and p-n junction devices. Herein, we use MoS2/GaAs heterojunction as a self-driven photodetector…

Silicon Photo-Multipliers (SiPMs) are detectors sensitive to single photons that are used to detect scintillation and Cherenkov light in a variety of physics and medical-imaging applications. SiPMs measure single photons by amplifying the…

A Silicon Photomultiplier, SiPM, is a metasystem of Avalanche Photodiodes, APDs, which embedded in a specific purpose electronic, becomes a metadevice with unique and useful advanced functionalities to capture, transmit and analyze…

The dark count rate is one of the key properties of avalanche photodiodes (APDs) and silicon photomultipliers (SiPMs). Previous studies have reported discrete shifts in the dark count rate on short timescales ~10 ms to ~100 s with small…

In this paper I want to review the current status of development of multi-pixel silicon-based avalanche photo-diodes operated in Geiger mode, also known as Silicon Photomultipliers (SiPM). Particular emphasis is given to the application of…

Integrating two-dimensional (2D) crystals into optical fibers can grant them optoelectronic properties and extend their range of applications. However, our ability to produce complicated structures is limited by the challenges of chemical…

The present manuscript summarizes novel studies on the application of large area avalanche photodiodes (LAAPDs) to the detection of X-rays and vacuum ultraviolet (VUV) light. The operational characteristics of four different LAAPDs…

Silicon single-photon detectors (SPDs) are key devices for detecting single photons in the visible wavelength range. Photon detection efficiency (PDE) is one of the most important parameters of silicon SPDs, and increasing PDE is highly…

Single-photon avalanche diodes (SPADs) are an emerging sensor technology capable of detecting individual incident photons, and capturing their time-of-arrival with high timing precision. While these sensors were limited to single-pixel or…