Related papers: Avalanche photodiodes based on MoS2/Si heterojunct…
Avalanche photodiode (APD) has been intensively investigated as a promising candidate to replace photomultiplier tubes (PMT) for weak light detection. However, in conventional APDs, a large portion of carrier energy drawn from the electric…
Avalanche photo detection is commonly used in applications which require single photon sensitivity. We examine the limits of using avalanche photo diodes (APD) for characterising photon statistics at high data rates. To identify the regime…
Design and physical operation principles of new microchannel avalanche photodiode (MC APD) with gain up to 10^5 and linearity range improved an order of magnitude compared to known similar devices. A distinctive feature of the new device is…
Avalanche photodetectors (APDs) are key components in optical communication systems due to their increased photocurrent gain and short response time as compared to conventional photodetectors. A detector design where the multiplication…
Avalanche photodiodes (APDs) are promising light sensor for various fields of experimental physics. It has been argued, however, that variation of APD gain with temperature could be a serious problem preventing APDs from replacing…
Enhancing photon detection efficiency and time resolution in photodetectors in the entire visible range is critical to improve the image quality of time-of-flight (TOF)-based imaging systems and fluorescence lifetime imaging (FLIM). In this…
Sensitive avalanche photodetectors (APDs) that operate within the ultraviolet spectrum are critically required for applications in detecting fire and deep-space exploration. However, the development of such devices faces significant…
Integrated photodetectors are essential components of scalable photonics platforms for quantum and classical applications. However, most efforts in the development of such devices to date have been focused on infrared telecommunications…
III-V material based digital alloy Avalanche Photodiodes (APDs) have recently been found to exhibit low noise similar to Silicon APDs. The III-V materials can be chosen to operate at any wavelength in the infrared spectrum. In this work, we…
Increasing the efficiency and reducing the footprint of on-chip photodetectors enables dense optical interconnects for emerging computational and sensing applications. Avalanche photodetectors (APD) are currently the dominating on-chip…
The increasing concentration of greenhouse gases, notably CH4 and CO2, has fueled global temperature increases, intensifying concerns regarding the prevailing climate crisis. Effectively monitoring these gases demands a detector spanning…
A measurement system for determining the gain distributions of avalanche photodiodes (APDs) in a low gain range is presented. The system is based on an ultralow-noise charge--sensitive amplifier and detects the output carriers from an APD.…
We have studied the performance of large area avalanche photodiodes (APDs) recently developed by Hamamatsu Photonics K.K, in high-resolution X-rays and Gamma-rays detections. We show that reach-through APD can be an excellent soft X-ray…
The Silicon Photomultiplier (SiPM) is a mature photodetector concept that is applied in a variety of applications ranging from medical imaging to automotive LiDAR systems. Over the last few years, improvements of the sensor performance are…
Controlling light penetration depth in Avalanche Photodiodes (APDs) and Single Photon Avalanche Diodes (SPADs) play a major role in achieving high multiplication gain by delivering light near the multiplication region where the electric…
A highly sensitive photodetection system with a detection limit of 1 photon/s was developed. This system uses a commercially available 200-mm-diameter silicon avalanche photodiode (APD) and an in-house-developed ultralow-noise readout…
Multilayer graded-bandgap avalanche photodiodes (APDs) are the future deterministic photomultipliers, owing to their deterministic amplification with twofold stepwise gain via impact ionization when operated in the staircase regime. Yet,…
We demonstrate monolithically grown germanium-tin (GeSn) on silicon avalanche photodiodes (APDs) for infrared light detection. A relatively thinner Ge buffer design was adopted to allow effective photo carriers to transport from the GeSn…
Avalanche photodiodes are commonly used as detectors for low energy x-rays. In this work we report on a fitting technique used to account for different detector responses resulting from photo absorption in the various APD layers. The use of…
A series of III-V ternary and quarternary digital alloy avalanche photodiodes (APDs) have recently been seen to exhibit very low excess noise. Using band inversion of an environment-dependent atomistic tight binding description of short…