Related papers: Avalanche photodiodes based on MoS2/Si heterojunct…
We present an approach for the highly sensitive photon detection based on the quantum dots (QDs) operating at temperature of 77K. The detection structure is based on an AlAs/GaAs/AlAs double barrier resonant tunneling diode combined with a…
Polarization is an important property of GaN/AlN multi-quantum-well (MQW) avalanche diode (MAPD) but has been ignored in recent analyses of MAPD to simplify the Monte Carlo simulation. Here, the photocurrent characteristics of GaN/AlN MAPD…
Single-photon detectors are a pivotal component in photonic quantum technologies. A precise and comprehensive calibration of the intrinsic detection efficiency is of utmost importance to ensure the proper evaluation of the performance in…
We characterize a near-infrared single-photon detector based on an InGaAs/InP avalanche photodiode and the self-differencing post-processing technique. It operates at gate rates of 200 MHz and higher. The compact, integrated design employs…
We have developed a new detector of photons and charged particles- a hole-type structure with electrodes made of a double layered resistive material: a thin low resistive layer coated with a layer having a much higher resistivity. One of…
A Cherenkov detector based on an array of five lead fluoride ($\beta$-PbF$_2$) crystals of size 30 mm$\times$30 mm$\times$160 mm read out by reverse-type avalanche photodiodes (APD's) of active area 10 mm$\times$10 mm was used to measure…
Single-photon detectors (SPDs) are ubiquitous in many protocols for quantum imaging, sensing, and communications. Many of these protocols critically depend on the precise knowledge of their detection efficiency. A method for the calibration…
Silicon Photomultipliers (SiPMs) have been widely adopted for photon detection in next-generation dark matter and neutrino detection experiments. Internal crosstalk, resulting from secondary photons produced during charge avalanches, is a…
Single-photon avalanche diode (SPAD) arrays are solid-state detectors offering imaging capabilities at the level of individual photons, with unparalleled photon counting and time-resolved performance. This fascinating technology has…
Conventional semiconductors such as silicon and InGaAs based photodetectors have encountered a bottleneck in modern electronics and photonics in terms of spectral coverage, low resolution, non-transparency, non-flexibility and…
Silicon single-photon detectors (SPDs) are the key devices for detecting single photons in the visible wavelength range. Here we present high detection efficiency silicon SPDs dedicated to the generation of multiphoton entanglement based on…
InGaAs/InP single-photon avalanche diodes (SPADs) are widely used in practical applications requiring near-infrared photon counting such as quantum key distribution (QKD). Photon detection efficiency and dark count rate are the intrinsic…
P-n junctions based on vertically stacked single or few layer transition metal dichalcogenides (TMDCs) have attracted substantial scientific interest. Due to the propensity of TMDCs to show exclusively one type of conductivity, n- or…
Transition metal dichalcogenides (TMDs) are layered two-dimensional semiconductors explored for various optoelectronic applications, ranging from light-emitting diodes to single-photon emitters. To interact strongly with light, such devices…
Spectroscopy of Earth-like exoplanets and ultra-faint galaxies are priority science cases for the coming decades. Here, broadband source flux rates are measured in photons per square meter per hour, imposing extreme demands on detector…
In this paper we present a general method for estimating rates of accidental coincidence between a pair of single photon detectors operated within their saturation regimes. By folding the effects of recovery time of both detectors and the…
Low Gain Avalanche Detectors (LGADs) are silicon sensors with a built-in charge multiplication layer providing a gain of typically 10 to 50. Due to the combination of high signal-to-noise ratio and short rise time, thin LGADs provide good…
Initiating impact ionization of avalanche breakdown essentially requires applying a high electric field in a long active region, hampering carrier-multiplication with high gain, low bias and superior noise performance. Here we report the…
Single Photon Avalanche Diodes (SPADs) represent a cutting-edge imaging technology, capable of detecting individual photons with remarkable timing precision. Building on this sensitivity, Single Photon Cameras (SPCs) enable image capture at…
Implementation of high-speed quantum key distribution~(QKD) has become one of the major focus in the field, which produces high key-generation rate for applications. To achieve high-speed QKD, tailored techniques are developed and employed…