Related papers: Donor hyperfine Stark shift and the role of centra…
The Stark shift of the hyperfine coupling constant is investigated for a P donor in Si far below the ionization regime in the presence of interfaces using Tight-binding and Band Minima Basis approaches and compared to the recent precision…
We present a complete theoretical treatment of Stark effects in doped silicon, whose predictions are supported by experimental measurements. A multi-valley effective mass theory, dealing non-perturbatively with valley-orbit interactions…
We study the effect of a static electric field on lithium donor spins in silicon. The anisotropy of the effective mass leads to the anisotropy of the quadratic Stark susceptibility, which we determined using the Dalgarno-Lewis exact…
Electric fields can be used to tune donor spins in silicon using the Stark shift, whereby the donor electron wave function is displaced by an electric field, modifying the hyperfine coupling between the electron spin and the donor nuclear…
We report Stark shift measurements for 121Sb donor electron spins in silicon using pulsed electron spin resonance. Interdigitated metal gates on top of a Sb-implanted 28Si epi-layer are used to apply electric fields. Two Stark effects are…
We develop an efficient back gate for silicon-on-insulator (SOI) devices operating at cryogenic temperatures, and measure the quadratic hyperfine Stark shift parameter of arsenic donors in isotopically purified $^{28}$Si-SOI layers using…
We experimentally study the coupling of Group V donor spins in silicon to mechanical strain, and measure strain-induced frequency shifts which are linear in strain, in contrast to the quadratic dependence predicted by the valley…
Adiabatic shuttling of single impurity bound electrons to gate induced surface states in semiconductors has attracted much attention in recent times, mostly in the context of solid-state quantum computer architecture. A recent transport…
The T center in silicon has recently drawn a lot of attention for its potential in quantum information science. The sensitivity of the zero-phonon line (ZPL) to electrical field was recently investigated by a combination of different…
We report the use of novel, capacitively terminated coplanar waveguide (CPW) resonators to measure the quadratic Stark shift of phosphorus donor qubits in Si. We confirm that valley repopulation leads to an anisotropic spin-orbit Stark…
Phosphorus donor nuclear spins in silicon couple weakly to the environment making them promising candidates for high-fidelity qubits. The state of a donor nuclear spin qubit can be manipulated and read out using its hyperfine interaction…
Control of hyperfine interactions is a fundamental requirement for quantum computing architecture schemes based on shallow donors in silicon. However, at present, there is lacking an atomistic approach including critical effects of…
Donor electron spins in semiconductors make exceptional quantum bits because of their long coherence times and compatibility with industrial fabrication techniques. Despite many advances in donor-based qubit technology, it remains difficult…
We demonstrate theoretically the existence of a linear dc Stark shift of the individual substates of an alkali atom in its ground state, dressed by a circularly polarized laser field. It arises from the electroweak nuclear anapole moment…
An electronically variational approach to the calculation of atomic hyperfine structure transition energies under the influence of static external electric fields is presented. The method avoids the calculation of intermediate atomic states…
Atomic-scale understanding of phosphorous donor wave functions underpins the design and optimisation of silicon based quantum devices. The accuracy of large-scale theoretical methods to compute donor wave functions is dependent on…
The electronic structure of the three-particle donor bound exciton (D$^0$X) in silicon is computed using a large-scale atomic orbital tight-binding method within the Hartree approximation. The calculations yield a transition energy close to…
Accurate prediction of shallow-donor electron binding energies is critical for device modeling, dopant activation, and donor-based quantum technologies. Traditional beyond-DFT approaches (e.g., hybrid functionals, GW) are prohibitively…
The ac Stark shift of hyperfine levels of neutral atoms can be calculated using the third order perturbation theory(TOPT), where the third order corrections are quadratic in the atom-photon interaction and linear in the hyperfine…
Donors in silicon can now be positioned with an accuracy of about one lattice constant, making it possible in principle to form donor arrays for quantum computation or quantum simulation applications. However the multi-valley character of…