Related papers: Hot-electron effect in spin relaxation of electric…
Multi-valley spin relaxation in $n$-type GaAs quantum wells with in-plane electric field is investigated at high temperature by means of kinetic spin Bloch equation approach. The spin relaxation time first increases and then decreases with…
Multivalley spin relaxation in $n$-type bulk GaAs in the presence of high electric field is investigated from the microscopic kinetic spin Bloch equation approach with the $\Gamma$ and $L$ valleys included. We show that the spin relaxation…
Electron spin relaxation in graphene on a substrate is investigated from the fully microscopic kinetic spin Bloch equation approach. All the relevant scatterings, such as the electron-impurity, electron--acoustic-phonon,…
We investigate the intrinsic spin relaxation of conduction electrons in germanium due to electron-phonon scattering. We derive intravalley and intervalley spin-flip matrix elements for a general spin orientation and quantify the resulting…
Based on a Monte Carlo method, we investigate the influence of transport conditions on the electron spin relaxation in GaAs. The decay of initial electron spin polarization is calculated as a function of distance under the presence of…
A semiclassical Monte Carlo approach is adopted to study the multivalley spin depolarization of drifting electrons in a doped n-type GaAs bulk semiconductor, in a wide range of lattice temperature ($40<T_L<300$ K) and doping density…
We investigate the spin-dependent electron-phonon scatterings of the $L$ and $\Gamma$ valleys and the band structure near the conduction band minima in germanium. We first construct a $16\times16$ ${\bm k}\cdot{\bm p}$ Hamiltonian in the…
A realistic pseudopotential model is introduced to investigate the phonon-induced spin relaxation of conduction electrons in bulk silicon. We find a surprisingly subtle interference of the Elliott and Yafet processes affecting the spin…
We present a technique to calculate the spin relaxation of hot electrons during their energy thermalization in the Gamma-valley of zinc-blende semiconductors. The results of this model match recent experimental data and they can be used to…
We study the spin relaxation in an interacting two--dimensional electron gas in a strong magnetic field for the case that the electron density is close to filling just one Landau sub--level of one spin projection, i.e., for filling factor…
The finite spin lifetime in solids is often considered a major hindrance for the development of spintronic devices, which typically require cryogenic temperatures to mitigate this phenomenon. In this work we show that this feature can…
Compared with direct-gap semiconductors, the valley degeneracy of silicon and germanium opens up new channels for spin relaxation that counteract the spin degeneracy of the inversion-symmetric system. Here the symmetries of the…
Spin orientation of photoexcited carriers and their energy relaxation is investigated in bulk Ge by studying spin-polarized recombination across the direct band gap. The control over parameters such as doping and lattice temperature is…
A unique spin depolarization mechanism, induced by the presence of g-factor anisotropy and intervalley scattering, is revealed by spin transport measurements on long-distance germanium devices in a longitudinal magnetic field. The…
In this letter, we first show electrical spin injection in the germanium conduction band at room temperature and modulate the spin signal by applying a gate voltage to the channel. The corresponding signal modulation agrees well with the…
We investigate the electron and hole spin relaxation in an ensemble of self-assembled InAs/In$_{0.53}$Al$_{0.24}$Ga$_{0.23}$As/InP quantum dots with emission wavelengths around $1.5$~$\mu$m by pump-probe Faraday rotation spectroscopy.…
We report the first experimental demonstration of electrical spin injection, transport and detection in bulk germanium (Ge). The non-local magnetoresistance in n-type Ge is observable up to 225K. Our results indicate that the spin…
We use semiclassical Monte Carlo approach along with spin density matrix calculations to model spin polarized electron transport. The model is applied to germanium nanowires and germanium two dimensional channels to study and compare spin…
We have measured the electron spin relaxation rate and the integrated spin noise power in n-doped GaAs for temperatures between 4 K and 80 K and for doping concentrations ranging from 2.7 x 10^{-15} cm^{-3} to 8.8 x 10^{-16} cm^{-3} using…
We study the charge and spin transport under high electric field (up to several kV/cm) on the surface of topological insulator Bi$_2$Se$_3$, where the electron-surface optical phonon scattering dominates except at very low temperature. Due…