Related papers: Klein-tunneling transistor with ballistic graphene
We calculate the transmission of electrons and holes between two normal-metal electrodes (N), separated over a distance L by an impurity-free superconductor (S) with d-wave symmetry of the order parameter. Nodal lines of vanishing…
Graphene p-n junctions provide an ideal platform for investigating novel behavior at the boundary between electronics and optics that arise from massless Dirac fermions, such as whispering gallery modes and Veselago lensing. Bilayer…
A spin field effect transistor (FET) is proposed by utilizing a graphene nanoribbon as the channel. Similar to the conventional spin FETs, the device involves ferromagnetic metals as a source and drain; they, in turn, are connected to the…
In Dirac materials, the low energy excitations behave like ultra-relativistic massless particles with linear energy dispersion. A particularly intriguing phenomenon arises with the intrinsic charge transport behavior at the Dirac point…
Bistability-two distinct stable states under identical parameter-is not only a fundamental physical concept but also of importance in practical applications. While plasmon-polaritonic bistability representing history-dependent stable states…
We study time-dependent electron transport and quantum noise in a ballistic graphene field effect transistor driven by an ac gate potential. The non-linear response to the ac signal is computed through Floquet theory for scattering states…
Using the coupled-mode theory in guided-wave optics and electronics, we explore a directional coupling structure composed of two parallel waveguides electrostatically induced by the split-gate technique in bulk graphene. Our results show…
We investigate the transport characteristics of monolayer graphene p-n junctions by means of the non-equilibrium Green's function technique. It is shown that thanks to the high interband tunneling of chiral fermions and to a finite bandgap…
The electronic transport in few-layer black phosphorus (FLBP) nanoribbons is studied theoretically. The system is modeled on the basis of band-structures, which have been measured recently by $\mu$-ARPES experiments. We show that the…
The so-called Klein paradox - unimpeded penetration of relativistic particles through high and wide potential barriers - is one of the most exotic and counterintuitive consequences of quantum electrodynamics (QED). The phenomenon is…
We study electron transport in a strained graphene sheet subjected to a sequence of $N$ electrostatic and magnetic barriers. Employing a modified and improved transfer-matrix framework, we examine how the transmission and reflection…
We report a bipolar field effect tunneling transistor that exploits to advantage the low density of states in graphene and its one atomic layer thickness. Our proof-of-concept devices are graphene heterostructures with atomically thin boron…
In the paper the version of the field effect tunnel nano transistor on quantum well is researched, where the control voltage is applied to the barriers surrounding the quantum well, and electron drain comes from the quantum well. Electrons…
We study the tunneling zone solutions of a one-dimensional electrostatic potential for the relativistic (Dirac to Klein-Gordon) wave equation when the incoming wave packet exhibits the possibility of being almost totally transmitted through…
Graphene electrons feature a pair of massless Dirac cones of opposite pseudospin chirality at two valleys. Klein tunneling refers to the intriguing capability of these chiral electrons to penetrate through high and wide potential barrier.…
Quantum confinement of graphene Dirac-like electrons in artificially crafted nanometer structures is a long sought goal that would provide a strategy to selectively tune the electronic properties of graphene, including bandgap opening or…
Herein we discuss the fabrication of ballistic suspended graphene nanostructures supplemented with local gating. Using in-situ current annealing, we show that exceptional high mobilities can be obtained in these devices. A detailed…
The inherent asymmetry of the electric transport in graphene is attributed to Klein tunneling across barriers defined by $\textit{pn}$-interfaces between positively and negatively charged regions. By combining conductance and shot noise…
We present an efficient numerical approach for treating ballistic quantum transport across devices described by tight binding (TB) Hamiltonians designated to systems with localized potential defects. The method is based on the wave function…
Graphene nanoribbon quantum dot qubits have been proposed as promising candidates for quantum computing applications to overcome the spin-decoherence problems associated with typical semiconductor (e.g. GaAs) quantum dot qubits. We perform…