Related papers: Klein-tunneling transistor with ballistic graphene
Localized states in graphene have garnered significant attention in quantum information science due to their potential applications. Despite graphene's superior transport and electronic properties compared to other semiconductors, achieving…
An armchair graphene ribbon switch has been designed based on the principle of the Klein paradox. The resulting switch displays an excellent on-off ratio performance. Anomalous tunneling phenomena are observed in our numerical simulations.…
Calculations of quantum transport in a carbon nanotube transistor show that such a device offers unique functionality. It can operate as a ballistic field-effect transistor, with excellent characteristics even when scaled to 10 nm…
I provide a transfer matrix method for the Foldy-Wouthuysen representation of the Dirac equation. I derive the relationship between the reflection and transmission coefficients of the Dirac spinors and the wavefunction in the transformed…
We introduce a generalized Hamiltonian describing not only all topological phases observed experimentally in Kekul\'e graphene (KekGr) but predicting also new ones. These phases show features like a quadratic band crossing point, valley…
We theoretically study the electronic transport properties of Dirac fermions through one and double triangular barriers in graphene. Using the transfer matrix method, we determine the transmission, conductance and Fano factor. They are…
We analyze the nonlinear carrier transport in the gated graphene-phosphorene (G-P) hybrid structures - the G-P field-effect transistors (G-P-FETs) using a phenomenological model. This model assumes that due to high carrier densities in the…
We fabricated a non-local spin valve device with Co-MgO injector/detector tunnel contacts on a graphene spin channel. In this device, the spin polarization of the injector contact can be tuned by both the injector current bias and the gate…
Recently it has been experimentally shown that a graphene nanoribbon (GNR) can be obtained by unzipping a carbon nanotube (CNT). This makes it possible to fabricate all-carbon heterostructures that have a unique interface between a CNT and…
Heat flow in nanomaterials is an important area of study, with both fundamental and technological implications. However, little is known about heat flow in two-dimensional (2D) devices or interconnects with dimensions comparable to the…
The hybridization of $\sigma$ and $\pi$ orbitals of carbon atoms in graphene depends on the surface curvature. Considering a single junction between flat and rippled graphene subsystems, it is found an accumulation of charge in the rippled…
Graphene field-effect transistors are fabricated utilizing single-crystal hexagonal boron nitride (h-BN), an insulating isomorph of graphene, as the gate dielectric. The devices exhibit mobility values exceeding 10,000 cm2/V-sec and current…
We propose an analytical device model for a graphene nanoribbon field-effect transistor (GNR-FET). The GNR-FET under consideration is based on a heterostructure which consists of an array of nanoribbons clad between the highly conducting…
Transfer characteristics of p-doped graphene/monolayer-MoS2 heterostructure at 300 K are measured experimentally and analyzed based on a model calculation. In the model, we first discretize the Poisson equation (PE) into multiple zones. In…
The electronic properties of graphene can be modified by the local interaction with a selected metal substrate. To probe this effect, Scanning Tunneling Microscopy is widely employed, particularly by means of local measurement via lock-in…
We have fabricated transistor structures using fluorinated single-layer graphene flakes and studied their electronic properties at different temperatures. Compared with pristine graphene, fluorinated graphene has very large and strongly…
We investigate the Goos-H\"{a}nchen-like shifts for Dirac fermions in transmission through a monolayer graphene barrier. The lateral shifts, as the functions of the barrier's width and the incidence angle, can be negative and positive in…
It is usually assumed that tunneling current is fairly independent of temperature. By performing an atomistic transport simulation, we show, to the contrary, that the subthreshold tunneling current in a graphene nanoribbon (GNR)…
In this Letter, we present the patterning, exfoliation and micromanipulation of thin graphitic discs which are subsequently connected and patterned into sub-100nm wide ribbons with a resist-free process using Focused Ion Beam (FIB)…
Whereas massless Dirac fermions in monolayer graphene exhibit Klein tunneling when passing through a potential barrier upon normal incidence, such a barrier totally reflects massive Dirac fermions in bilayer graphene due to difference in…