Related papers: Electron Spin Decoherence in Silicon Carbide Nucle…
Paramagnetic defects and nuclear spins are the major sources of magnetic field-dependent spin relaxation in point defect quantum bits. The detection of related optical signals has led to the development of advanced relaxometry applications…
Spin qubit coherence is a fundamental resource for the realization of quantum technologies. For solid-state platforms, spin decoherence is dominated by the magneto-active environment in the lattice, limiting their applicability. While…
Great efforts have been made to the investigation of defects in silicon carbide for their attractive optical and spin properties. However, most of the researches are implemented at low and room temperature. Little is known about the spin…
We report a measurement of the spin-echo decay of a single electron spin confined in a semiconductor quantum dot. When we tip the spin in the transverse plane via a magnetic field burst, it dephases in 37 ns due to the Larmor precession…
Electron spin qubits in molecular systems offer high reproducibility and the ability to self assemble into larger architectures. However, interactions between neighbouring qubits are 'always-on' and although the electron spin coherence…
There are two distinct techniques of proven effectiveness for extending the coherence lifetime of spin qubits in environments of other spins. One is dynamical decoupling, whereby the qubit is subjected to a carefully timed sequence of…
We experimentally demonstrate the use of a single electronic spin to measure the quantum dynamics of distant individual nuclear spins from within a surrounding spin bath. Our technique exploits coherent control of the electron spin,…
High-spin defect centers in crystal matrices are used in quantum computing technologies, highly sensitive sensors, and single-photon sources. In this work, optically active nitrogen-vacancy color centers NV in a 28Si-enriched (nuclear spin…
Coherent control and optical readout of the electron spin of the $^{29}$SiV$^{-}$ center in diamond has been demonstrated in literature, with exciting prospects for implementations as memory nodes and spin qubits. Nuclear spins may be even…
Silicon-vacancy and tin-vacancy defects in diamond are of interest as alternative qubits to the NV center due to their superior optical properties. While the availability of optical transitions in these defects is one of their assets,…
The dynamics and decoherence of an electronic spin-1/2 qubit coupled to a bath of nuclear spins via hyperfine interactions in a quantum dot is studied. We show how exact results from the integrable solution can be used to understand the…
Donors in silicon hold considerable promise for emerging quantum technologies, due to the their uniquely long electron spin coherence times. Bi donors in silicon differ from P and other Group V donors in several significant respects: they…
The dynamics of a spin-1/2 particle coupled to a nuclear spin bath through an isotropic Heisenberg interaction is studied, as a model for the spin decoherence in quantum dots. The time-dependent polarization of the central spin is…
Phosphorus-doped silicon single crystals with 0.19 % <= f <= 99.2 %, where f is the concentration of 29^Si isotopes, are measured at 8 K using a pulsed electron spin resonance technique, thereby the effect of environmental 29^Si nuclear…
Nitrogen vacancy (NV) centers, optically-active atomic defects in diamond, have attracted tremendous interest for quantum sensing, network, and computing applications due to their excellent quantum coherence and remarkable versatility in a…
Coherence time is an essential parameter for quantum sensing, quantum information, and quantum computation. In this work, we demonstrate electron spin coherence times as long as 0.1 s for an ensemble of rubidium atoms trapped in a solid…
Nitrogen vacancy (NV-) color centers in diamond are a prime candidate for use in quantum information devices, owing to their spin-1 ground state, straightforward optical initialization and readout, and long intrinsic coherence times in a…
Erbium implanted silicon as a quantum technology platform has both telecommunications and integrated circuit processing compatibility. In Si implanted with Er to a concentration of 3x10^17 cm^3 and O to a concentration of 10^20 cm^3, the…
The gate fidelity and the coherence time of a qubit are important benchmarks for quantum computation. We construct a qubit using a single electron spin in a Si/SiGe quantum dot and control it electrically via an artificial spin-orbit field…
In this work, we consider decoherence of a central spin by a spin bath. In order to study the non-perturbative decoherence regimes, we develop an efficient mean-field-based method for modeling the spin-bath decoherence, based on the…