Related papers: Electron Spin Decoherence in Silicon Carbide Nucle…
Spins of negatively charged nitrogen-vacancy (NV$^-$) defects in diamond are among the most promising candidates for solid-state qubits. The fabrication of quantum devices containing these spin-carrying defects requires position-controlled…
In double quantum dots, the exchange interaction between two electron spins renormalizes the excitation energy of pair-flips in the nuclear spin bath, which in turn modifies the non-Markovian bath dynamics. As the energy renormalization…
The control of discrete quantum states in solids and their use for quantum information processing is complicated by the lack of a detailed understanding of the mechanisms responsible for qubit decoherences. For spin qubits in semiconductor…
Transition metal (TM) defects in silicon carbide have favorable spin coherence properties and are suitable as quantum memory for quantum communication. To characterize TM defects as quantum spin-photon interfaces, we model defects that have…
Nuclear spins near group-IV defects in diamond are promising candidates for quantum memories in quantum network applications. Here, we demonstrate high-fidelity control of a single $^{13}$C nuclear spin coupled to a tin-vacancy (SnV) center…
Neutral silicon-carbon divacancy (V$_{Si}$V$_{C}$) in cubic silicon carbide (3C-SiC) is a promising class of point defects for quantum technologies based on active crystalline centers. Within the theoretical framework of spin-polarized…
We present pulsed electron-nuclear double resonance (ENDOR) experiments which enable us to characterize the coupling between bismuth donor spin qubits in Si and the surrounding spin bath of 29Si impurities which provides the dominant…
A major challenge in using spins in the solid state for quantum technologies is protecting them from sources of decoherence. This can be addressed, to varying degrees, by improving material purity or isotopic composition for example, or…
Spin impurities in diamond can be versatile tools for a wide range of solid-state-based quantum technologies, but finding spin impurities which offer sufficient quality in both photonic and spin properties remains a challenge for this…
An outstanding hurdle for defect spin qubits in silicon carbide (SiC) is single-shot readout - a deterministic measurement of the quantum state. Here, we demonstrate single-shot readout of single defects in SiC via spin-to-charge…
Erbium ions doped into crystals have unique properties for quantum information processing, because of their optical transition at 1.5 $\mu$m and of the large magnetic moment of their effective spin-1/2 electronic ground state. Most…
The nitrogen-vacancy (NV) defect center in diamond has demonstrated great capability for nanoscale magnetic sensing and imaging for both static and periodically modulated target fields. However, it remains a challenge to detect and image…
Spins in silicon that are accessible via a telecom-compatible optical transition are a versatile platform for quantum information processing that can leverage the well-established silicon nanofabrication industry. Key to these applications…
A promising approach for multi-qubit quantum registers is to use optically addressable spins to control multiple dark electron-spin defects in the environment. While recent experiments have observed signatures of coherent interactions with…
We experimentally isolate, characterize and coherently control up to six individual nuclear spins that are weakly coupled to an electron spin in diamond. Our method employs multi-pulse sequences on the electron spin that resonantly amplify…
Defects in silicon carbide are of intense and increasing interest for quantum-based applications due to this material's properties and technological maturity. We calculate the multi-particle symmetry adapted wave functions of the negatively…
We theoretically consider solid state nuclear spins in a semiconductor nanostructure environment as long-lived, high-fidelity quantum memory. In particular, we calculate, in the limit of a strong applied magnetic field, the fidelity versus…
Divacancy defects in silicon carbide have long-lived electronic spin states and sharp optical transitions, with properties that are similar to the nitrogen-vacancy defect in diamond. We report experiments on 4H-SiC that investigate…
Due to interest in both solid state based quantum computing architectures and the application of quantum mechanical systems to nanomagnetometry, there has been considerable recent attention focused on understanding the microscopic dynamics…
Optically addressable molecular triplet spins provide a chemically tunable platform for quantum application, but their coherence is often limited by interactions with surrounding spin baths. Here we demonstrate controlled suppression of…