Related papers: Spin transport with traps: dramatic narrowing of t…
In the field of spintronics the "conductivity mismatch" problem remains an important issue. Here the difference between the resistance of ferromagnetic electrodes and a (high resistive) transport channel causes injected spins to be…
We investigate the spin transport and precession in graphene by using the Hanle effect in nonlocal and threeterminal measurement geometries. Identical spin lifetimes, spin diffusion lengths and spin polarizations are observed in graphene…
Spin precession and dephasing ("Hanle effect") provides an unambiguous means to establish the presence of spin transport in semiconductors. We compare theoretical modeling with experimental data from drift-dominated silicon spin-transport…
Resistance between two ferromagnetic electrodes coupled to a normal channel depends on their relative magnetizations. The spin-dependent component, R, of the resistance changes with magnetic field, B, normal to the directions of…
Motivated by the recently discovered magnonic Hanle effect in an insulating antiferromagnet [Wimmer et al., Phys. Rev. Lett. 125, 247204 (2020)], we develop a spin transport theory based on low-energy waves of antiferromagnetic N\'eel…
The precession of electron spins in a perpendicular magnetic field, the so called Hanle effect, provides an unique insight into spin properties of a non-magnetic material. In practice, the spin signal is fitted to the analytic solution of…
Since its discovery, graphene has been a promising material for spintronics: its low spin-orbit coupling, negligible hyperfine interaction, and high electron mobility are obvious advantages for transporting spin information over long…
We investigate spin precession (Hanle effect) in the prototypical organic spintronic giant magnetoresistance (GMR) device La0.7Sr0.3MnO3(LSMO)/tris(8-hydroxyquinoline)(Alq3)/AlOx/Co. The Hanle effect is not observed in measurements taken by…
The specific band structure of graphene, with its unique valley structure and Dirac neutrality point separating hole states from electron states has led to the observation of new electronic transport phenomena such as anomalously quantized…
A longstanding goal of research in semiconductor spintronics is the ability to inject, modulate, and detect electron spin in a single device. A simple prototype consists of a lateral semiconductor channel with two ferromagnetic contacts,…
Non-local spin injection in lateral spin valves generates a pure spin current which is a diffusive flow of spins (i.e. spin angular momentums) with no net charge flow. The diffusive spins lose phase coherency in precession while undergoing…
In the past decade, chiral materials have drawn significant attention because it is widely claimed that they can act as spin injectors/detectors due to the chirality-induced spin selectivity (CISS) effect. Nevertheless, the microscopic…
We demonstrate the injection and transport of spin-polarized electrons through n-type doped silicon with in-plane spin-valve and perpendicular magnetic field spin precession and dephasing ("Hanle effect") measurements. A voltage applied…
The Hanle effect describes suppression of spin polarization due to precession in a magnetic field. This is a standard spintronics tool and it gives access to the spin lifetime of samples in which spins are generated homogeneously. We…
The recent discovery of two-dimensional magnetic insulators has generated a great deal of excitement over their potential for nanoscale manipulation of spin or magnetism. One intriguing use for these materials is to put them in contact with…
We use lateral spin valves with varying interface resistance to measure non-local Hanle effect in order to extract the spin-diffusion length of the non-magnetic channel. A general expression that describes spin injection and transport,…
Spin transport in graphene carries the potential of a long spin diffusion length at room temperature. However, extrinsic relaxation processes limit the current experimental values to 1-2 um. We present Hanle spin precession measurements in…
Evidence of spin precession and dephasing ("Hanle effect") induced by an external magnetic field is the only unequivocal proof of spin-polarized conduction electron transport in semiconductor devices. However, when spin dephasing is very…
Although the creation of spin polarization in various non-magnetic media via electrical spin injection from a ferromagnetic tunnel contact has been demonstrated, much of the basic behavior is heavily debated. It is reported here for…
We present a theoretical study of spin transport in a superconducting mesoscopic spin valve under the action of a magnetic field misaligned with respect to the injected spin. We demonstrate that superconductivity can either strongly enhance…