Related papers: Bipolar switching in an orthogonal spin transfer s…
Magnetic junction is considered which consists of two ferromagnetic metal layers, a thin nonmagnetic spacer in between, and nonmagnetic lead. Theory is developed of a magnetization reversal due to spin injection in the junction.…
We consider a biaxial macrospin with an easy and hard axis, and study its dynamical evolution under the combined effects of thermal noise and spin transfer torque. The spin-torque is associated with both a perpendicularly magnetized…
This paper describes a numerical experiment of magnetization switching driven by spin-polarized current in high-TMR magnetic tunnel junctions (TMR>100%). Differently from other works, the current density distribution throughout the…
Electrical currents at the surface or edge of a topological insulator are intrinsically spin-polarized. We show that such surface/edge currents can be used to switch the orientation of a molecular magnet weakly coupled to the surface or…
In contrast to earlier studies performed on simple Co/Cu/Co sandwiches, we have investigated spin transfer effects in complex spin-valve pillars with a diameter of 130nm developed for current-perpendicular to the plane (CPP)…
The effect of undesirable high-frequency free-layer switching in magnetic multilayer systems, referred to as back hopping, is investigated by means of the spin-diffusion model. A possible origin of the back-hopping effect is found to be the…
Memristive devices whose resistance can be hysteretically switched by electric field or current are intensely pursued both for fundamental interest as well as potential applications in neuromorphic computing and phase-change memory. When…
We perform 3D micromagnetic simulations of current-driven magnetization dynamics in nanoscale exchange biased spin-valves that take account of (i) back action of spin-transfer torque on the pinned layer, (ii) non-linear damping and (iii)…
We propose a magnetization reversal model to explain the perpendicular switching of a single ferromagnetic layer induced by an in-plane current. Contrary to previously proposed reversal mechanisms that such magnetic switching is directly…
We introduce a new class of spintronics devices in which a spin-valve like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled…
Spin orbit torque (SOT) has been considered as one of the promising technologies for the next-generation magnetic random access memory (MRAM). So far, SOT has been widely utilized for inducing various modes of magnetization switching.…
We investigate current-induced magnetization switching for a multilayer structure that allows a reduced switching current while maintaining high thermal stability of the magnetization. The structure consists of a perpendicular polarizer, a…
We present theoretical description of the precessional switching processes induced by simultaneous application of spin-polarized current and external magnetic field to antiferromagnetic component of the "pinned" layer. We found stability…
Electrical current-induced deterministic magnetization switching in a magnetic multilayer structure without external magnetic field is realized by utilizing interlayer exchange coupling. Two ferromagnetic Co layers, with in-plane and…
The spin-transfer effect is investigated for the vortex state of a magnetic nanodot. A spin current is shown to act similarly to an effective magnetic field perpendicular to the nanodot. Then a vortex with magnetization (polarity) parallel…
The spin-polarized transport is investigated in a new type of magnetic tunnel junction which consists of two ferromagnetic electrodes separated by a magnetic barrier and a nonmagnetic metallic spacer. Based on the transfer matrix method and…
We propose the spin swapping effect for an exchange magnon spin current in a perpendicularly magnetized ferromagnetic medium with in plane anisotropy on the surface. The excitation of a magnon current flowing along an in-plane direction…
We fabricated a current-perpendicular-to-plane pseudo-spin-valve nanopillar comprising a thick and a thin Co rings with deep submicron lateral sizes. The dc current can effectively induce the flux-closure vortex states in the rings with…
With ultra-fast writing capacity and high reliability, the spin-orbit torque is regarded as a promising alternative to fabricate next-generation magnetic random access memory. However, the three-terminal setup can be challenging when…
Spontaneous spin polarization of the electrical current flowing through nonmagnetic semiconductor junctions can be generated by carrier scattering processes that are independent of the carrier spin. The two required elements for…