Related papers: Bipolar switching in an orthogonal spin transfer s…
This paper shows that the presence of two dynamical regimes, characterized by different precessional-axis, is the origin of the non-monotonic behavior of the output integrated power for large-amplitude magnetization precession driven by…
Flexible control of magnetization switching by electrical manners is crucial for applications of spin-orbitronics. Besides of a switching current that is parallel to an applied field, a bias current that is normal to the switching current…
We propose a method for inducing magnetization reversal using an AC spin current polarized perpendicular to the equilibrium magnetization of the free magnetic layer. We show that the critical AC spin current is significantly smaller than…
Formation of a magnetic hysteresis loop with respect to a bias voltage is investigated theoretically in a spin-valve device based on a single magnetic molecule. We consider a device consisting of two ferromagnetic electrodes bridged by a…
We report on the combination of current-induced spin-orbit torques and giant magnetoresistance in a single device to achieve all-electrical write and read out of the magnetization. The device consists of perpendicularly magnetized TbCo and…
We discuss a possible mechanism of the spin-transfer induced oscillations of a vortex in the free layer of spin-valve nanostructures, in which the polarizer layer has a planar magnetization. We demonstrate that if such planar polarizer is…
The magnetization switching of a thin ferromagnetic layer placed on top of a heavy metal (such as Pt, Ta or W) driven by an in-plane current has been observed in recent experiments. The magnetization dynamics of these processes is studied…
We report on the possibility to detect hinge spin polarization in magnetic topological insulators by resistance measurements. By implementing a three-dimensional model of magnetic topological insulators into a multi-terminal device with…
We propose a hole-induced mechanism of spin-polarized current generation by circularly polarized synchrotron radiation and corresponding induced magnetization in magnetically-doped topological insulators…
Perpendicular magnetic tunnel junctions (p-MTJs) switched utilizing bipolar electric fields have extensive applications in energy-efficient memory and logic devices. Voltage-controlled magnetic anisotropy linearly lowers the energy barrier…
The spin-orbit torque device is promising as a candidate for next generation magnetic memory, while the static in-plane field needed to induce deterministic switching is a main obstacle for its application in highly integrated circuits.…
A new way of getting controlled spin dependent transport through a two-terminal bridge setup is explored. The system comprises a magnetic quantum ring which is directly coupled to a magnetic quantum wire and subjected to an in-plane…
An electrical current can transfer spin angular momentum to a ferromagnet. This novel physical phenomenon, called spin transfer, offers unprecedented spatial and temporal control over the magnetic state of a ferromagnet and has tremendous…
The discovery that a spin polarized current can exert a large torque on a ferromagnet through a transfusion of spin angular momentum, offers a new way to control a magnetization by simple current injection, without the help of an applied…
We describe spin transfer in a ferromagnet/normal metal/ferromagnet spin-valve point contact. Spin is transferred from the spin-polarized device current to the magnetization of the free layer by the mechanism of incoherent magnon emission…
Spin-orbit spin transfer torque allows an efficient control of magnetization by an in-plane current. Recent experiments found that the spin-orbit torque has strong dependence on the magnetization angle [Garello et al., Nature Nanotechnol.…
Magnetic materials with strong perpendicular magnetic anisotropy are of great interest for the development of nonvolatile magnetic memory and computing technologies due to their high stabilities at the nanoscale. However, electrical…
Spin-transfer torque in asymmetric spin valves can destabilize both parallel and antiparallel configurations and can lead to precessional modes also in the absence of an external magnetic field. We find a bistable precessional regime in…
We compare magnetization switching in Co/Cu/Co nanopillars with uncoupled and dipole-field coupled Co layers. In uncoupled nanopillars, current-driven switching is hysteretic at low magnetic field H and changes to reversible, characterized…
The magnetization reversal and dynamics of a spin valve pillar, whose lateral size is 64$\times$64 nm$^2$, are studied by using micromagnetic simulation in the presence of spin transfer torque. Spin torques display both characteristics of…