Related papers: Spin relaxation in a Si quantum dot due to spin-va…

We expand on previous work that treats relaxation physics of low-lying excited states in ideal, single electron, silicon quantum dots in the context of quantum computing. These states are of three types: orbital, valley, and spin. The…

Although silicon is a promising material for quantum computation, the degeneracy of the conduction band minima (valleys) must be lifted with a splitting sufficient to ensure formation of well-defined and long-lived spin qubits. Here we…

An electron spin qubit in silicon quantum dots holds promise for quantum information processing due to the scalability and long coherence. An essential ingredient to recent progress is the employment of micromagnets. They generate a…

An electron spin qubit in a silicon donor atom is a promising candidate for quantum information processing because of its long coherence time. To be sensed with a single-electron transistor, the donor atom is usually located near an…

We study theoretically the spin relaxation rate in quasi-one-dimensional coupled double semiconductor quantum dots. We consider InSb and GaAs-based systems in the presence of the Rashba spin-orbit interaction, which causes mixing of…

Electron spins in silicon quantum dots are excellent qubits because they have long coherence times, high gate fidelities, and are compatible with advanced semiconductor manufacturing techniques. The valley degree of freedom, which results…

Fluctuations of electric fields can change the position of a gate-defined quantum dot in a semiconductor heterostructure. In the presence of magnetic field gradient, these stochastic shifts of electron's wavefunction lead to fluctuations of…

We study theoretically spin relaxation during phonon-assisted tunneling of a single electron in self-assembled InAs/GaAs quantum-dot molecules formed by vertically stacked dots. We find that the spin-flip tunneling rate may be as high as 1%…

We calculate electron and nuclear spin relaxation rates in a quantum dot due to the combined action of Nyquist noise and electron-nuclei hyperfine or spin-orbit interactions. The relaxation rate is linear in the resistance of the gate…

We study decoherence of an electron spin qubit in a quantum dot due to charge noise. We find that at the lowest order, the pure dephasing channel is suppressed for both $1/f$ charge noise and Johnson noise, so that charge noise leads to a…

We investigate the spin relaxation induced by acoustic phonons in the presence of spin-orbit interactions in single electron Si/SiGe lateral coupled quantum dots. The relaxation rates are computed numerically in single and double quantum…

In silicon quantum dots (QDs), at a certain magnetic field commonly referred to as the "hot spot", the electron spin relaxation rate (T_1^(-1)) can be drastically enhanced due to strong spin-valley mixing. Here, we experimentally find that…

Long-range quantum communication for spin qubits is an important open problem. Here we study decoherence of an electron spin qubit that is being transported in a moving quantum dot. We focus on spin decoherence due to spin-orbit interaction…

We have measured the relaxation time, T1, of the spin of a single electron confined in a semiconductor quantum dot (a proposed quantum bit). In a magnetic field, applied parallel to the two-dimensional electron gas in which the quantum dot…

One of the main advantages of silicon spin qubits over other solid-state qubits is their inherent scalability and compatibility with the 300 mm CMOS fabrication technology that is already widely used in the semiconductor industry, whilst…

Valley splitting is a key figure of silicon-based spin qubits. Quantum dots in Si/SiGe heterostructures reportedly suffer from a relatively low valley splitting, limiting the operation temperature and the scalability of such qubit devices.…

We discuss the rate of relaxation of the total spin in the two-electron droplet in the vicinity of the magnetic field driven singlet-triplet transition. The total spin relaxation is attributed to spin-orbit and electron-phonon interactions.…

The presence of non-degenerate valley states in silicon can drastically affect electron dynamics in silicon-based heterostructures, leading to electron spin relaxation and spin-valley coupling. In the context of solid-state spin qubits, it…

We consider spin-lattice relaxation processes for electrons trapped in lateral Si quantum dots in a $[001]$ inversion layer. Such dots are characterized by strong confinement in the direction perpendicular to the surface and much weaker…

The phonon-induced spin relaxation in a two-dimensional quantum dot embedded inside a semiconductor slab is investigated theoretically. An enhanced relaxation rate is found due to the phonon van Hove singularities. Oppositely, a vanishing…