English

Giant anisotropy of spin relaxation and spin-valley mixing in a silicon quantum dot

Mesoscale and Nanoscale Physics 2020-07-01 v2 Quantum Physics

Abstract

In silicon quantum dots (QDs), at a certain magnetic field commonly referred to as the "hot spot", the electron spin relaxation rate (T_1^(-1)) can be drastically enhanced due to strong spin-valley mixing. Here, we experimentally find that with a valley splitting of 78.2 ±{\pm} 1.6 μ{\mu}eV, this hot spot in spin relaxation can be suppressed by more than 2 orders of magnitude when the in-plane magnetic field is oriented at an optimal angle, about 9{\deg} from the [100] sample plane. This directional anisotropy exhibits a sinusoidal modulation with a 180{\deg} periodicity. We explain the magnitude and phase of this modulation using a model that accounts for both spin-valley mixing and intravalley spin-orbit mixing. The generality of this phenomenon is also confirmed by tuning the electric field and the valley splitting up to 268.2 ±{\pm} 0.7 μ{\mu}eV.

Keywords

Cite

@article{arxiv.1912.08365,
  title  = {Giant anisotropy of spin relaxation and spin-valley mixing in a silicon quantum dot},
  author = {Xin Zhang and Rui-Zi Hu and Hai-Ou Li and Fang-Ming Jing and Yuan Zhou and Rong-Long Ma and Ming Ni and Gang Luo and Gang Cao and Gui-Lei Wang and Xuedong Hu and Hong-Wen Jiang and Guang-Can Guo and Guo-Ping Guo},
  journal= {arXiv preprint arXiv:1912.08365},
  year   = {2020}
}

Comments

13 pages and 4 figures for Manuscript, 17 pages and 7 figures for Supplementary material