Giant anisotropy of spin relaxation and spin-valley mixing in a silicon quantum dot
Abstract
In silicon quantum dots (QDs), at a certain magnetic field commonly referred to as the "hot spot", the electron spin relaxation rate (T_1^(-1)) can be drastically enhanced due to strong spin-valley mixing. Here, we experimentally find that with a valley splitting of 78.2 1.6 eV, this hot spot in spin relaxation can be suppressed by more than 2 orders of magnitude when the in-plane magnetic field is oriented at an optimal angle, about 9{\deg} from the [100] sample plane. This directional anisotropy exhibits a sinusoidal modulation with a 180{\deg} periodicity. We explain the magnitude and phase of this modulation using a model that accounts for both spin-valley mixing and intravalley spin-orbit mixing. The generality of this phenomenon is also confirmed by tuning the electric field and the valley splitting up to 268.2 0.7 eV.
Keywords
Cite
@article{arxiv.1912.08365,
title = {Giant anisotropy of spin relaxation and spin-valley mixing in a silicon quantum dot},
author = {Xin Zhang and Rui-Zi Hu and Hai-Ou Li and Fang-Ming Jing and Yuan Zhou and Rong-Long Ma and Ming Ni and Gang Luo and Gang Cao and Gui-Lei Wang and Xuedong Hu and Hong-Wen Jiang and Guang-Can Guo and Guo-Ping Guo},
journal= {arXiv preprint arXiv:1912.08365},
year = {2020}
}
Comments
13 pages and 4 figures for Manuscript, 17 pages and 7 figures for Supplementary material