Related papers: Resonance Raman mapping as an interface phonon pro…
Multi-phonon Raman scattering in semiconductor nanocrystals is treated taking into account both adiabatic and non-adiabatic phonon-assisted optical transitions. Because phonons of various symmetries are involved in scattering processes,…
We report Raman spectra measurements on a MoS2 monolayer supported on SiO2 as a function of temperature. Unlike in previous studies, the positions of the two main Raman modes, E2g1 and A1g exhibited nonlinear temperature dependence.…
This work reports an ESR study of low energy, low fluence phosphorus ion implantation into silicon in order to observe the activation of phosphorus donors placed in close proximity to the Si-SiO2 interface. Electrical measurements, which…
In order to investigate the origin of the phase transition observed in NaV$_2$O$_5$, as well as its electronic structure, we have measured Raman intensities as a function of the laser wavelength above and below the phase transition…
A comparison of experimentally observed Raman scattering data with Raman line-shapes, generated theoretically using phonon confinement model, has been carried out to understand the sensitivity of different Raman spectral parameters on…
Structural modifications in InP(111) due to 1.5 MeV implantation of Sb have been characterized using first order and second order Raman spectroscopy. With both Longitudinal Optical (LO) and Transverse Optical (TO) modes allowed for…
Heat transfer across interfaces of graphene and polar dielectrics (e.g. SiO2) could be mediated by direct phonon coupling, as well as electronic coupling with remote interfacial phonons (RIPs). To understand the relative contribution of…
We present measurements of the $D''$ Raman mode in graphene and carbon nanotubes at different laser excitation energies. The Raman mode around 1050 - 1150\,cm$^{-1}$ originates from a double-resonant scattering process of longitudinal…
We report a detailed experimental and theoretical investigation of the effect of residual strain, and strain relaxation, which manifests itself at the Si/SiO$_{2}$ interfaces in commercial silicon-on-insulator (SOI) wafers. SOI material is…
We present Raman spectroscopy of the polycrystalline Si and Ge films deposited by molecular beam deposition on a dielectric substrate. The Raman study has been made using lasers with different wavelengths. Structural properties of the…
As the length-scales of materials decrease, heterogeneities associated with interfaces approach the importance of the surrounding materials. Emergent electronic and magnetic interface properties in superlattices have been studied…
Phonon polaritons (PhPs) are hybrid photon-phonon waves which enable strong light-matter interactions and subdiffractional confinement, potentially empowering applications in sensing, nonlinear optics and nanoscale energy manipulation. In…
Revealing hidden non-radiative (dark) of resonant nanostructures using optical methods such as dark-field spectroscopy often becomes a sophisticated problem due to a weak coupling of these modes with a far-field radiation, whereas methods…
We demonstrate Fano-like resonances in silicon-on-insulator (SOI) nanowire-based coupled Sagnac interferometers (SIs) formed by a self-coupled waveguide. By adjusting the reflectivity of the two SIs and coupling strength between them, we…
Surface phonon-polaritons propagating along interfaces of polar dielectrics coexist with excitons in many van der Waals heterostructures, so understanding their mutual interactions is of great interest. Here, we investigate the type I…
The evolution of the optical phonons in layered semiconductor alloys SnSe1-xSx is studied as a function of the composition by using polarized Raman spectroscopy with six different excitation wavelengths (784.8, 632.8, 532, 514.5, 488, and…
Harnessing quantum interference among bosons provides significant opportunities as bosons often carry longer coherence time than fermions. As an example of quantum interference, Fano resonance involving phonons or photons describes the…
Raman spectra of CaCuO2/SrTiO3 superlattices show clear spectroscopic marker of two structures formed in CaCuO2 at the interface with SrTiO3. For non-superconducting superlattices, grown in low oxidizing atmosphere, the 425 cm-1 frequency…
Raman scattering [K. M. F. Shahil et al., Appl. Phys. Lett. 96, 153103 (2010), V. Gnezdilov et al., Phys. Rev. B 84, 195118 (2011) and H. H. Kung et al., Phys. Rev. B 95, 245406 (2017)], inelastic helium scattering [X. Zhu et al., Phys.…
We consider theoretically a superlattice formed by thin conducting layers separated spatially between insulating layers. The dispersion of two coupled phonon-plasmon modes of the system is analyzed by using Maxwell's equations, with the…