Multi-phonon Raman scattering in semiconductor nanocrystals: importance of non-adiabatic transitions
Abstract
Multi-phonon Raman scattering in semiconductor nanocrystals is treated taking into account both adiabatic and non-adiabatic phonon-assisted optical transitions. Because phonons of various symmetries are involved in scattering processes, there is a considerable enhancement of intensities of multi-phonon peaks in nanocrystal Raman spectra. Cases of strong and weak band mixing are considered in detail. In the first case, fundamental scattering takes place via internal electron-hole states and is participated by s- and d-phonons, while in the second case, when the intensity of the one-phonon Raman peak is strongly influenced by the interaction of an electron and of a hole with interface imperfections (e. g., with trapped charge), p-phonons are most active. Calculations of Raman scattering spectra for CdSe and PbS nanocrystals give a good quantitative agreement with recent experimental results.
Keywords
Cite
@article{arxiv.cond-mat/0111282,
title = {Multi-phonon Raman scattering in semiconductor nanocrystals: importance of non-adiabatic transitions},
author = {E. P. Pokatilov and S. N. Klimin and V. M. Fomin and J. T. Devreese and F. W. Wise},
journal= {arXiv preprint arXiv:cond-mat/0111282},
year = {2009}
}
Comments
16 pages, 2 figures, E-mail addresses: [email protected], [email protected], [email protected], accepted for publication in Physical Review B