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The plasma wave instabilities in ballistic Field Effect Transistors (FETs) have a promise of developing sensitive THz detectors and efficient THz sources. One of the difficulties in achieving efficient resonant plasmonic detection and…
Radio-frequency dispersive read-out can provide a useful probe to nano-scale structures such as nano-wire devices, especially when the implementation of charge sensing is not straightforward. Here we demonstrate dispersive `gate-only'…
We use low-temperature scanning tunneling microscopy (LT-STM) to characterize the early stages of silver fluorination. On Ag(100), we observe only one adsorbate species, which shows a bias-dependent STM topography. Notably, at negative bias…
We study plasmonic excitations in the limit of few electrons, in one-atom thick sodium chains, and characterize them based on collectivity. We also compare the excitations to classical localised plasmon modes and find for the longitudinal…
Manipulating the lattice structure of ferroelectric quantum materials enables their use in low-power electronic devices, including field-effect transistors. WTe$_2$ is a Weyl-semimetal candidate and ferroelectric, both properties arising…
The ultrafast conversion of electrical to optical signals at the nanoscale is of fundamental interest for data processing, telecommunication and optical interconnects. However, the modulation bandwidths of semiconductor LEDs are limited by…
Vortices play a crucial role in determining the properties of superconductors as well as their applications. Therefore, characterization and manipulation of vortices, especially at the single vortex level, is of great importance. Among many…
An optical phonon limited velocity model has been employed to investigate high-field transport in a selection of layered 2D materials for both, low-power logic switches with scaled supply voltages, and high-power, high-frequency…
Tuning band gaps in two-dimensional (2D) materials is of great interest in the fundamental and practical aspects of contemporary material sciences. Recently, black phosphorus (BP) consisting of stacked layers of phosphorene was…
We report on tuning the carrier capture events at a single dangling bond (DB) midgap state by varying the substrate temperature, doping type, and doping concentration. All-electronic time-resolved scanning tunneling microscopy (TR-STM) is…
Electric field enhancement mediated through sharp tips in scattering-type scanning near-field optical microscopy (s-SNOM) enables optical material analysis down to the 10-nm length scale, and even below. Nevertheless, mostly the…
Tip enhanced Raman scattering (TERS) amplifies the intensity of vibrational Raman scattering by employing the tip of a probe interacting, in ultra close proximity, with a surface. Although a general understanding of the TERS process is…
Two-dimensional (2D) materials are particularly attractive to build the channel of next-generation field-effect transistors (FETs) with gate lengths below 10-15 nm. Because the 2D technology has not yet reached the same level of maturity as…
Electron spin resonance with a scanning tunneling microscope (ESR-STM) combines the high energy resolution of spin resonance spectroscopy with the atomic scale control and spatial resolution of STM. Here we describe the upgrade of a…
Spatial signal processors (SSP) for emerging millimeter-wave wireless networks are critically dependent on link discovery. To avoid loss in communication, mobile devices need to locate narrow directional beams with millisecond latency. In…
The heterogeneous integration of lithium niobate photonic waveguide devices onto a silicon nitride waveguide platform via a transfer-printing approach has been demonstrated for the first time. A fabrication process was developed to make…
We present an open-system quantum-mechanical 3D real-space study of the conduction band structure and conductive properties of two semiconductor systems, interesting for their beyond-Moore and quantum computing applications: phosphorus…
In this paper we demonstrate atomic-scale lithography on hydrogen terminated Ge(001. The lithographic patterns were obtained by selectively desorbing hydrogen atoms from a H resist layer adsorbed on a clean, atomically flat Ge(001) surface…
The development of integrated photonic circuits utilizing gallium phosphide requires a robust, scalable process for fabrication of GaP-on-insulator devices. Here we present the first GaP photonic devices on SiO$_2$. The process exploits…
Scanning ion conductance microscopy (SICM) can image the surface topography of specimens in ionic solutions without mechanical probe--sample contact. This unique capability is advantageous for imaging fragile biological samples but its…