Related papers: Organic magnetoresistance from deep traps
We describe a new regime for low-field magnetoresistance in organic semiconductors, in which the spin-relaxing effects of localized nuclear spins and electronic spins interfere. The regime is studied by the controlled addition of localized…
A model for magnetoresistance in positionally disordered organic materials is presented and solved using percolation theory. The model describes the effects of spin flips on hopping transport by considering the effect of spin dynamics on an…
We derive kinetic equations describing injection and transport of spin polarized carriers in organic semiconductors with hopping conductivity via an impurity level. The model predicts a strongly voltage dependent magnetoresistance, defined…
We derive the kinetic equations for polaron hopping in organics that explicitly take into account the double occupation possibility and pair intersite correlations. The equations include simplified phenomenological spin dynamics and provide…
A recent theory of magnetoresistance in positionally disordered organic semiconductors is extended to include exchange and dipolar couplings between polarons. Analytic results are discovered when the hyperfine, exchange, and dipolar…
We present a theory of organic magnetoresistance (OMR) based on the quenching of the quantum correlation between the carrier's spin and its local environment when the incoherent hopping takes place. We prove that this process contributes a…
In solid state physics, giant magnetoresistance is the large change in electrical resistance due to an external magnetic field. Here we show that giant magnetoresistance is possible in a spin chain composed of weakly interacting layers of…
A recently introduced percolative theory of unipolar organic magnetoresistance is generalized by treating the hyperfine interaction semiclassically for an arbitrary hopping rate. Compact analytic results for the magnetoresistance are…
The magneto-electronic field effects in organic semiconductors at high magnetic fields are described by field-dependent mixing between singlet and triplet states of weakly bound charge carrier pairs due to small differences in their Land\'e…
We present a spin-boson theory for magnetotransport in organic semiconducting materials, on the basis of a coupling between charge carriers' spin and a local bosonic environment, which is shown to be an irreducible ingredient in…
Organic Magnetoresistance is defined as the change of resistance in an organic material, such as a conducting polymer, as a function of an imposed magnetic field. We demonstrate this effect in a Polypyrrole/ Polydimethylsiloxane complex by…
Both negative magnetoresistance and nonlinear magnetoresisitance were observed in silicon strip nuclear radiation detector in room temperature if we applied high magnetic field intensity in different direction. This result is different with…
We develop a theory of magnetoresistance based on variable-range hopping. An exponentially large, low-field and necessarily positive magnetoresistance effect is predicted in the presence of Hubbard interaction and spin-dynamics under…
We present a theoretical study of the ballistic magnetoresistance in Ni contacts using first-principles, atomistic electronic-structure calculations. In particular we investigate the role of defects in the contact region in order to explain…
We explore the magnetoresistance (MC) effect in an organic semiconductor device based on the magnetic field related bipolaron formation. By establishing a group of dynamic equations, we present the transition among spin-parallel,…
The LAO/STO interface hosts a two-dimensional electron system that is unusually sensitive to the application of an in-plane magnetic field. Low-temperature experiments have revealed a giant negative magnetoresistance (dropping by 70\%),…
We present a new mechanism for a spin blockade effect associated with a change in the type of magnetic anisotropy over oxidation state in a single molecule transistor, by taking an example of an individual Eu$_{2}$(C$_{8}$H$_{8}$)$_{3}$…
Ballistic spin polarized transport through diluted magnetic semiconductor (DMS) single and double barrier structures is investigated theoretically using a two-component model. The tunneling magnetoresistance (TMR) of the system exhibits…
Using the example of a pressed sample consisting of chromium dioxide nanoparticles coated with insulating shells, we study the relationship between the electronic transport system and magnetic subsystem in granular spin-polarized metals. It…
Two-component conductors -- e.g., semi-metals and narrow band semiconductors -- often exhibit unusually strong magnetoresistance in a wide temperature range. Suppression of the Hall voltage near charge neutrality in such systems gives rise…