Related papers: Fractional Quantum Hall Effect in a Diluted Magnet…
The fractional quantum Hall (FQH) effect is reported in a high mobility CdTe quantum well at mK temperatures. Fully-developed FQH states are observed at filling factor 4/3 and 5/3 and are found to be both spin-polarized ground state for…
The fractional quantum Hall effect (FQHE), observed in two-dimensional (2D) charged particles at high magnetic fields, is one of the most fascinating, macroscopic manifestations of a many-body state stabilized by the strong Coulomb…
Using a 50-nm width, ultra-clean GaAs/AlGaAs quantum well, we have studied the Landau level filling factor $\nu = 5/2$ fractional quantum Hall effect in a perpendicular magnetic field $B \sim$ 1.7 T and determined its dependence on tilted…
Since the discovery of the Fractional Quantum Hall Effect in 1982 there has been considerable theoretical discussion on the possibility of fractional quantization of conductance in the absence of Landau levels formed by a quantizing…
Unlike regular electron spin, the pseudospin degeneracy of Fermi points in graphene does not couple directly to magnetic field. Therefore, graphene provides a natural vehicle to observe the integral and fractional quantum Hall physics in an…
The spin transitions in the fractional quantum Hall effect provide a direct measure of the tiny energy differences between differently spin-polarized states, and thereby serve as an extremely sensitive test of the quantitative accuracy of…
Exact diagonalization of a two-dimensional electron gas in a strong magnetic field in the disk geometry shows that there exists a filling factor range in the second Landau level where the states significantly differ from those in the lowest…
We observe fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $\nu=1/2$ in two-dimensional hole systems confined to GaAs quantum wells of width 30 to 50 nm and having bilayer-like charge distributions.…
We compare quantum Hall systems at filling factor 2 to those at filling factors 2/3 and 2/5, corresponding to the exact filling of two lowest electron or composite fermion (CF) Landau levels. The two fractional states are examples of CF…
Semiconductor interfaces, such as these existing in multilayer structures (e.g., quantum wells (QWs)), are interesting because of their ability to form 2D electron gases (2DEGs), in which charge carriers behave completely differently than…
It is known experimentally that at not very large filling factors $\nu$ the quantum Hall conductivity peaks corresponding to the same Landau level number $N$ and two different spin orientations are well separated. These peaks occur at…
We report inelastic light scattering experiments in the fractional quantum Hall regime at filling factors $\nu\lesssim1/3$. A spin mode is observed below the Zeeman energy. The filling factor dependence of the mode energy is consistent with…
In the fractional quantum Hall effect regime we measure diagonal ($\rho_{xx}$) and Hall ($\rho_{xy}$) magnetoresistivity tensor components of two-dimensional electron system (2DES) in gated GaAs/Al$_{x}$Ga$_{1-x}$As heterojunctions,…
Following recent work of Halperin, Lee, and Read, and Kalmeyer and Zhang, a double-layer electron system with total Landau-level filling factor $\nu=1/2$ is mapped onto an equivalent system of fermions in zero average magnetic field…
The two-dimensional electron system (2DES) is a unique laboratory for the physics of interacting particles. Application of a large magnetic field produces massively degenerate quantum levels known as Landau levels. Within a Landau level the…
We have experimentally studied the fractional quantum Hall effect (FQHE) in SiGe/Si/SiGe quantum wells in relatively weak magnetic fields, where the Coulomb interaction between electrons exceeds the cyclotron splitting by a factor of a few…
We investigate a gapped two-dimensional nodal-line semimetal subjected to a perpendicular magnetic field. We identify an unusual pattern for Landau levels, where the energy of Landau levels first decreases and then starts increasing versus…
The quantum Hall regime in a smooth random potential is considered when two disorder-broadened Zeeman levels overlap strongly. Spin-orbit coupling is found to cause a drastic change in the percolation network which leads to a strong…
Magnetic-field-induced phase transitions in the integer quantum Hall effect are studied under the formation of paired Landau bands arising from Zeeman spin splitting. By investigating features of modular symmetry, we showed that…
We investigate theoretically the fractional quantum Hall effect at half-filling in the lowest Landau level observed in asymmetric wide quantum wells. The asymmetry can be achieved by a potential bias applied between the two sides of the…