Related papers: Multistate nonvolatile straintronics controlled by…
Electric control of magnetic properties is an important challenge for modern magnetism and spintronic development. In particular, an ability to write magnetic state electrically would be highly beneficial. Among other methods, the use of…
Ferroelectric devices use their electric polarization ferroic order as the switching and storage physical quantity for memory applications. However, additional built-in physical quantities and memory paradigms are requested for…
Planar electrodes patterned on a ferroelectric substrate are shown to provide lateral control of the conductive state of a two-terminal graphene stripe. A multi-level and on-demand memory control of the graphene resistance state is…
The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric…
Reversible straintronic switching of a nanomagnet's magnetization between two stable or metastable states promises ultra-energy-efficient non-volatile memory. Here, we report strain-induced magnetization switching in ~300 nm sized FeGa…
The PZT/FeGa thin film memtranstor was prepared and the modulation of the magnetoelectric coefficient by external magnetic and electric fields was studied. The magnetoelectric coefficient of the PZT/FeGa memtranstor can be reversed by…
Information technologies require entangling data stability with encryption for a next generation of secure data storage. Current magnetic memories, ranging from low-density stripes up to high-density hard drives, can ultimately be detected…
The magnetoelectric effects in multiferroics have a great potential in creating next-generation memory devices. We conceive a new concept of non-volatile memories based on a type of nonlinear magnetoelectric effects showing a…
Prospective spintronic memory and logic devices will benefit from the negligible stray field and ultrafast magnetic dynamics inherent to antiferromagnets [1]. However, realizing isothermal, nonvolatile, and deterministic switching of…
A new mechanism for memristive switching in 2D materials is through electric-field controllable electronic/structural phase transitions, but these devices have not outperformed status quo 2D memristors. Here, we report a high-performance…
A common perception assumes that magnetic memories require ferromagnetic materials with a non-zero net magnetic moment. However, it has been recently proposed that compensated antiferromagnets with a zero net moment may represent a viable…
The ground state properties of correlated electron systems can be extraordinarily sensitive to external stimuli, such as temperature, strain, and electromagnetic fields, offering abundant platforms for functional materials. We present a…
Tuneable capacitors are vital for adaptive and reconfigurable electronics, yet existing approaches require continuous bias or mechanical actuation. Here we demonstrate a voltage-programmable ferroelectric memcapacitor based on HfZrO that…
Memristors are emerging as key electronic components that retain resistance states without power. Their non-volatile nature and ability to mimic synaptic behavior make them ideal for next-generation memory technologies and neuromorphic…
Electric-field control of magnetism via inverse magnetostrictive effect is an efficient path towards improving energy-efficient storage and sensing devices based on giant magnetoresistance effect. In this letter, we report on lateral…
Manipulation of tunneling spin-polarized electrons via a ferroelectric interlayer sandwiched between two ferromagnetic electrodes, dubbed Multiferroic Tunnel Junctions (MFTJs), can be achieved not only by the magnetic alignments of two…
Much attention has been given recently to flexible and wearable integrated-electronic devices, with a strong emphasis on real-time sensing, computing and communication technologies. Thin ferroelectric films exhibit switchable polarization…
We investigate different approaches towards a nonvolatile switching of the remanent magnetization in single-crystalline ferromagnets at room temperature via elastic strain using ferromagnetic thin film/piezoelectric actuator hybrids. The…
We report on the fabrication and electrical characterization of few-layer graphene (FLG) devices coated with a ferroelectric polymer layer of poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)]. Highly stable and reliable resistance…
This paper reviews the recent developments on building nanoelectronics for our future information processing paradigm using multiferroic composites. With appropriate choice of materials, when a tiny voltage of few tens of millivolts is…