Related papers: Performance limits projection of black phosphorous…
This study addresses high electric field transport in multilayer black phosphorus (BP) field effect transistors (FETs) with self-heating and thermal spreading by dielectric engineering. Interestingly, we found that multilayer BP device on a…
Black phosphorus (BP) has emerged as a promising material candidate for next generation electronic and optoelectronic devices due to its high mobility, tunable band gap and highly anisotropic properties. In this work, polarization resolved…
The double carrier transport has been observed in thin film black phosphorus (BP) field effect transistor (FET) devices in highly electron doped region. BP thin films with typical thickness of 15 nm were encapsulated by hexagonal boron…
The energy bandgap is an intrinsic character of semiconductors, which largely determines their properties. The ability to continuously and reversibly tune the bandgap of a single device during real time operation is of great importance not…
Unencapsulated, exfoliated black phosphorus (BP) flakes are found to chemically degrade upon exposure to ambient conditions. Atomic force microscopy, electrostatic force microscopy, transmission electron microscopy, X-ray photoelectron…
We demonstrate that a field effect transistor (FET) made of few layer black phosphorus (BP) encapsulated in hexagonal boron nitride (h-BN) in vacuum, exhibts the room temperature hole mobility of 5200 $cm^2/Vs$ being limited just by the…
The first order standard perturbation theory combined with ab initio projector augmented wave operator challenges the realization of the standard Sternheimer equation with linear computational efficiency. This efficiency motivates us to…
We report ambipolar transport properties in black phosphorus using an electric-double-layer transistor (EDLT) configuration. The transfer curve clearly exhibits ambipolar transistor behavior with an ON-OFF ratio of 5*10^3. The band gap was…
In this work, an evaluation of the contact quality of black phosphorus (BP) field-effect transistors (FETs) from different technologies previously reported is performed by means of an efficient and reliable contact resistance extraction…
Optical and electronic properties of black phosphorus strongly depend on the number of layers and type of stacking. Using first-principles calculations within the framework of density functional theory, we investigate the electronic…
We present a theory for single- and two-phonon charge carrier scattering in anisotropic two-dimensional semiconductors applied to single-layer black phosphorus (BP). We show that in contrast to graphene, where two-phonon processes due to…
Black phosphorus (P) has emerged as a layered semiconductor with a unique crystal structure featuring corrugated atomic layers and strong in-plane anisotropy in its physical properties. Here, we demonstrate that the crystal orientation and…
Due to its corrugated hexagonal lattice structure, Black phosphorus (BP) has unique anisotropic physical properties, which provides an additional freedom for designing devices. Many body interactions, including interactions with phonon, is…
Black phosphorus (BP) has emerged as a direct-bandgap semiconducting material with great application potentials in electronics, photonics, and energy conversion. Experimental characterization of the anisotropic thermal properties of BP,…
Atomically thin black phosphorus (BP) field-effect transistors show strong-weak localization transition which is tunable through gate voltages. Hopping transports through charge impurity induced localized states are measured at low-carrier…
Weak localization was observed and determined in a black phosphorus (bP) field-effect transistor 65 nm thick. The weak localization behaviour was found to be in excellent agreement with the Hikami-Larkin-Nagaoka model for fields up to 1~T,…
The discovery of graphene triggered a rapid rise of unexplored two-dimensional materials and heterostructures having optoelectronic and photonics properties that can be tailored on the nanoscale. Among these materials, black phosphorus (BP)…
Pentagonal PdSe2 is a promising candidate for layered electronic devices, owing to its high air-stability and anisotropic transport properties. Here, we investigate the performance of p-type FET based on PdSe$_2$ mono-layer using…
The electric field effect is a useful means of elucidating intrinsic material properties as well as for designing functional devices. The electric-double-layer transistor (EDLT) enables the control of carrier density in a wide range, which…
We demonstrate that encapsulation of atomically thin black phosphorus (BP) by hexagonal boron nitride (h-BN) sheets is very effective for minimizing the interface impurities induced during fabrication of BP channel material for quantum…