Related papers: From Spin Torque Nano-Oscillators to Memristors: M…
Spin currents are used to write information in magnetic random access memory (MRAM) devices by switching the magnetization direction of one of the ferromagnetic electrodes of a magnetic tunnel junction (MTJ) nanopillar. Different physical…
In a nanopillar with dipolarly coupled vortices, we present an experimental and simulation study to understand how the interplay between the bias field and spin transfer torque impacts reversal of the vortex cores. We find that, depending…
Over the past two decades, the research of (Ga,Mn)As has led to a deeper understanding of relativistic spin-dependent phenomena in magnetic systems. It has also led to discoveries of new effects and demonstrations of unprecedented…
In 2008, it was widely announced that the missing memristor, a basic two-terminal electrical circuit element, had finally been discovered. The memristor is the fourth and last such circuit element and thus completes circuit theory.…
Magnonics is an emerging research field that addresses the use of spin waves (magnons), purely magnetic waves, for information transport and processing. Spin waves are a potential replacement for electric current in modern computational…
The control of magnetization by electric current is a rapidly developing area motivated by a strong synergy between breakthrough basic research discoveries and industrial applications in the fields of magnetic recording, magnetic field…
We study, both experimentally and by numerical modeling, the magnetic dynamics that can be excited in a magnetic thin-film nanopillar device using the spin torque from a spatially localized current injected via a 10s-of-nm-diameter…
Exploiting spin degree of freedom of electron a new proposal is given to characterize spin-based logical operations using a quantum interferometer that can be utilized as a programmable spin logic device (PSLD). The ON and OFF states of…
We present a simple and fast method to simulate spin-torque driven magnetisation dynamics in nano-pillar spin-valve structures. The approach is based on the coupling between a spin transport code based on random matrix theory and a…
Recent progress in physics on spin dependent transport in magnetic nanostructures is reviewed. Special attention is paid on the spin accumulation and spin current caused by spin injection into non-magnetic metals and semiconductors and…
Neuro-inspired computing architectures are one of the leading candidates to solve complex, large-scale associative learning problems. The two key building blocks for neuromorphic computing are the synapse and the neuron, which form the…
Time-resolved X-ray microscopy is used to image the influence of alternating high-density currents on the magnetization dynamics of ferromagnetic vortices. Spin-torque induced vortex gyration is observed in micrometer-sized permalloy…
Spin-mechanics studies interactions between spin systems and mechanical vibrations in a nanomechanical resonator and explores their potential applications in quantum information processing. In this tutorial, we summarize various types of…
Transfer of angular momentum from a spin-polarized current to a ferromagnet provides an efficient means to control the dynamics of nanomagnets. A peculiar consequence of this spin-torque, the ability to induce persistent oscillations of a…
In this paper, a 3-terminal spin-transfer torque nano-oscillator (STNO) is studied using the concurrent spin injection of a spin-polarized tunneling current and a spin Hall current exciting the free layer into dynamic regimes beyond what is…
We describe a spin logic device with controllable magnetization switching of perpendicularly magnetized ferromagnet / heavy metal structures on a ferroelectric (1-x)[Pb(Mg1/3Nb2/3)O3]-x[PbTiO3] (PMN-PT) substrate using current-induced…
Memristive devices whose resistance can be hysteretically switched by electric field or current are intensely pursued both for fundamental interest as well as potential applications in neuromorphic computing and phase-change memory. When…
Nonvolatile devices based on the spin-orbit torque (SOT) mechanism are highly suitable for in-memory logic operations. The current objective is to enhance the memory density of memory cells while performing logic operations within the same…
Memristors are considered key building blocks for the development of neuromorphic computing hardware. For ferroelectric memristors with a capacitor-like structure, the polarization direction modulates the height of the Schottky barriers --…
A pure spin current generated within a nonlocal spin valve can exert a spin transfer torque on a nanomagnet. This nonlocal torque enables new design schemes for magnetic memory devices that do not require the application of large voltages…