Related papers: From Spin Torque Nano-Oscillators to Memristors: M…
In this paper, we build a general modelling framework for memristors, suitable for the simulation of event-based systems such as hardware spiking neural networks, and more generally, neuromorphic computing systems composed of three…
We report on the fabrication of sensitive nanotorsional resonators, which can be utilized as magnetometers for investigating the magnetization dynamics in small magnetic elements. The thermo-mechanical noise is calibrated with the resonator…
With ultra-fast writing capacity and high reliability, the spin-orbit torque is regarded as a promising alternative to fabricate next-generation magnetic random access memory. However, the three-terminal setup can be challenging when…
A numerical analysis on the computational capability of physical reservoir computing utilizing a spin-torque oscillator with two free layers is reported. Conventional spintronics devices usually consist of two ferromagnets, where the…
The rapidly expanding research in Spintronics, the electronics utilizing the electron spin instead of its charge, is driven by the very interesting potential applications. The actual task is to develop principles for the spin manipulations…
Memristive devices hold promise to improve the scale and efficiency of machine learning and neuromorphic hardware, thanks to their compact size, low power consumption, and the ability to perform matrix multiplications in constant time.…
We study theoretically the detection and possible utilization of electric current-induced mechanical torques in ferromagnetic-normal metal heterostructures that are generated by spin-flip scattering or the absorption of transverse spin…
The focus of this paper is on recent progress in muon spin rotation (muSR) studies of the vortex cores in type-II superconductors. By comparison of muSR measurements of the vortex core size in a variety of materials with results from…
We present a design-scheme for ultra-low power neuromorphic hardware using emerging spin-devices. We propose device models for 'neuron', based on lateral spin valves and domain wall magnets that can operate at ultra-low terminal voltage of…
Progress in the last two decades has effectively integrated spintronics and nanomagnetics into a single field, creating a new class of spin-based devices that are now being used both to Read (R) information from magnets and to Write (W)…
Variability in memristive devices based on h-BN dielectrics is studied in depth. Different numerical techniques to extract the reset voltage are described and the corresponding cycle-to-cycle variability is characterized by means of the…
Memory circuit elements, namely memristive, memcapacitive and meminductive systems, are gaining considerable attention due to their ubiquity and use in diverse areas of science and technology. Their modeling within the most widely used…
The value memristor devices offer to the neuromorphic computing hardware design community rests on the ability to provide effective device models that can enable large scale integrated computing architecture application simulations.…
We argue that for some species of magnetic nanoparticles the macrospin can have a nonvanishing moment of inertia and then an orbital angular momentum. We represent such nanoparticles by two interacting rigid rotors one of which has a large…
A review of the muon spin rotation and relaxation ($\mu$SR) studies on magnetic materials published from July 1993 is presented. It covers the investigation of magnetic phase diagrams, of spin dynamics and the analysis of the magnetic…
There is a renewed interest to study spin-polarized transport and spin dynamics in various electronic materials. The motivation to examine the spin degrees of freedom (mostly in electrons, but also in holes and nuclei) comes from various…
Memristors are nonlinear two-terminal circuit elements whose resistance at a given time depends on past electrical stimuli. Recently, networks of memristors have received attention in neuromorphic computing since they can be used to…
Spin-transfer torque magnetoresistive random access memory is a potentially transformative technology in the non-volatile memory market. Its viability depends, in part, on one's ability to predictably induce or prevent switching; however,…
The areal footprint of memristors is a key consideration in material-based neuromorophic computing and large-scale architecture integration. Electronic transport in the most widely investigated memristive devices is mediated by filaments,…
DC current induced magnetization reversal and magnetization oscillation was observed in 500 nm large size Co90Fe10/Cu/Ni80Fe20 pillars. A perpendicular external field enhanced the coercive field separation between the reference layer…