Related papers: Donor-driven spin relaxation in multi-valley semic…
Electron spin relaxation due to the D'yakonov-Perel' mechanism is investigated in bilayer graphene with only the lowest conduction band being relevant. The spin-orbit coupling is constructed from the symmetry group analysis with the…
Electron spin relaxation in a spin-polarized quantum Hall state is studied. Long spin relaxation times that are at least an order of magnitude longer than those measured in previous experiments were observed and explained within the…
A quantum theory of the spin-dependent scattering of semiconductor electrons by a Schottky barrier at an interface with a ferromagnet is presented. The reflection of unpolarized non-equilibrium carriers produces spontaneous…
We suggest an approach to the problem of free electron spin evolution in a semiconductor with arbitrary anisotropy or quantum structure in a magnetic field. The developed approach utilizes quantum kinetic equations for average spin…
We investigate the in-plane spin relaxation of electrons due to the D'yakonov-Perel' and Elliot-Yafet mechanisms including the intra- and inter-valley processes in monolayer MoS$_2$. We construct the effective Hamiltonian for the conduction…
Electron spin relaxation induced by phonon-mediated s-d exchange interaction in a II-VI diluted magnetic semiconductor quantum dot is investigated theoretically. The electron-acoustic phonon interaction due to piezoelectric coupling and…
We studied the diffusion and the relaxation of the polarized quasiparticle spins in superconductors. To that end, quasiparticles of polarized spins were injected through an interface of a mesoscopic superconducting Al wire in proximity…
An effective spin relaxation mechanism that leads to electron spin decoherence in a quantum dot is proposed. In contrast to the common calculations of spin-flip transitions between the Kramers doublets, we take into account a process of…
We present a generally applicable parameter-free first-principles method to determine electronic spin relaxation times and apply it to the technologically important group-IV materials silicon, diamond and graphite. We concentrate on the…
We develop the theory of single-electron silicon spin qubit relaxation in the presence of a magnetic field gradient. Such field gradients are routinely generated by on-chip micromagnets to allow for electrically controlled quantum gates on…
Highly accurate numerical results of phonon-induced two-electron spin relaxation in silicon double quantum dots are presented. The relaxation, enabled by spin-orbit coupling and the nuclei of $^{29}$Si (natural or purified abundance), are…
The processes of spin diffusion and relaxation are studied theoretically and numerically for quantum computation applications. Two possible realizations of a spin quantum computer (SQC) are analyzed: (i) a boundary spin chain in a 2D spin…
Physical systems reach thermal equilibrium through energy exchange with their environment, and for spins in solids the relevant environment is almost always the host lattice in which they sit. However, recent studies motivated by…
We employ the method of the theory of open quantum systems to analyze spin relaxation and decoherence in semiconductors in the presence of a magnetic field. We derive a set of Bloch equations for electron spin with a fully microscopic…
Thermal motion of the flux lines (FL) gives rise to fluctuating magnetic fields. These dynamic fields couple to the nuclei in the sample and relax the nuclear spins. Based on a model of harmonic fluctuations, we provide a theoretical…
We derive a spin-dependent Hamiltonian that captures the symmetry of the zone edge states in silicon. We present analytical expressions of the spin-dependent states and of spin relaxation due to electron-phonon interactions in the…
We expand on previous work that treats relaxation physics of low-lying excited states in ideal, single electron, silicon quantum dots in the context of quantum computing. These states are of three types: orbital, valley, and spin. The…
In the ballistic regime, the metallic temperature dependence of the conductivity in a two-dimensional electron system in silicon is found to change non-monotonically with the degree of spin polarization. In particular, it fades away just…
Multi-valley spin relaxation in $n$-type GaAs quantum wells with in-plane electric field is investigated at high temperature by means of kinetic spin Bloch equation approach. The spin relaxation time first increases and then decreases with…
In inversion asymmetric semiconductors, spin-orbit interactions give rise to very effective relaxation mechanisms of the electron spin. Recent work, based on the dimensionally constrained D'yakonov Perel' mechanism, describes increasing…