Related papers: Donor-driven spin relaxation in multi-valley semic…

We theoretically consider coherence times for spins in two quantum computer architectures, where the qubit is the spin of an electron bound to a P donor impurity in Si or within a GaAs quantum dot. We show that low temperature decoherence…

Non-local measurements are performed on a multi terminal device to $in-situ$ determine the spin diffusion length and in combination with resistivity measurements also the spin relaxation time in Al films. By varying the thickness of Al we…

A spin transport model is employed to study the effects of spin dephasing induced by diffusion-driven transit-time uncertainty through semiconductor spintronic devices where drift is the dominant transport mechanism. It is found that in the…

Extraction of electrons from a semiconductor to a ferromagnet as well as the case of injection in the reverse direction may be formulated as a scattering theory. However, the presence of bound states at the interface arising out of doping…

Semiconductor architectures hold promise for quantum information processing (QIP) applications due to their large industrial base and perceived scalability potential. Electron spins in silicon in particular may be an excellent architecture…

Spin relaxation time of conduction electrons through the Elliot-Yafet, D'yakonov-Perel and Bir-Aronov-Pikus mechanisms is calculated theoretically for bulk GaAs, GaSb, InAs and InSb of both $n$- and $p$-type. Relative importance of each…

Spin relaxation of conduction electrons in metals is significantly influenced by the Fermi surface topology. Electrons near Brillouin zone boundaries, special symmetry points, or accidental degeneracy lines have spin flip rates much higher…

We present a semiclassical theory of spin-diffusion in a ferromagnetic metal subject to a temperature gradient. Spin-flip scattering can generate pure thermal spin currents by short-circuiting spin channels while suppressing spin…

We study the charge and spin transport under high electric field (up to several kV/cm) on the surface of topological insulator Bi$_2$Se$_3$, where the electron-surface optical phonon scattering dominates except at very low temperature. Due…

Electron and phonon transient temperatures are analyzed in the case of nondegenerate semiconductors. An analytical solution is obtained for rectangular laser pulse absorption. It is shown that thermal diffusion is the main energy relaxation…

The spin relaxation of a two-dimensional electron system (2DES) formed in a symmetric quantum well is studied theoretically when the quantum well is parallel to the (110) plane of the zinc-blende structure, the spin polarization is…

Low-temperature electron spin relaxation is studied by the optical orientation method in bulk n-GaAs with donor concentrations from 10^14 cm^{-3} to 5x10^17 cm^{-3}. A peculiarity related to the metal-to-insulator transition (MIT) is…

Experimental evidence of electron spin precession during travel through the phosphorus-doped Si channel of an all-electrical device simultaneously indicates two distinct processes: (i) short timescales (~50ps) due to purely conduction-band…

The long standing problem of inexplicably short spin relaxation in carbon nanotubes (CNTs) is examined. The curvature-mediated spin-orbital interaction is shown to induce fluctuating electron spin precession causing efficient relaxation in…

For the last years spin effects in semiconductors have been of great interest not only in the context of solid state physics, but also for their potential usage in technology. In this paper we give a short review of spintronic materials, in…

High degree of electron spin polarization is of crucial importance in operation of spintronic devices. We study the propagation of spin-polarized electrons through a boundary between two n-type semiconductor regions with different doping…

Quantum limits of power dissipation in spintronic computing are estimated. A computing element composed of a single electron in a quantum dot is considered. Dynamics of its spin due to external magnetic field and interaction with adjacent…

Theory of the electron spin relaxation in graphene on the SiO$_2$ substrate is developed. Charged impurities and polar optical surface phonons in the substrate induce an effective random Bychkov-Rashba-like spin-orbit coupling field which…

The ability to manipulate plasmons is driving new developments in electronics, optics, sensing, energy, and medicine. Despite the massive momentum of experimental research in this direction, a predictive quantum-mechanical framework for…

We investigate the spin relaxation and Kondo resistivity caused by magnetic impurities in doped transition metal dichalcogenides monolayers. We show that momentum and spin relaxation times due to the exchange interaction by magnetic…