We derive a spin-dependent Hamiltonian that captures the symmetry of the zone edge states in silicon. We present analytical expressions of the spin-dependent states and of spin relaxation due to electron-phonon interactions in the multivalley conduction band. We find excellent agreement with experimental results. Similar to the usage of the Kane Hamiltonian in direct band-gap semiconductors, the new Hamiltonian can be used to study spin properties of electrons in silicon.
@article{arxiv.1103.3800,
title = {Spin-Orbit Symmetries of Conduction Electrons in Silicon},
author = {Pengke Li and Hanan Dery},
journal= {arXiv preprint arXiv:1103.3800},
year = {2015}
}