Related papers: Weak localization in low-symmetry quantum wells
Low-field magnetoresistance in p-type strained quantum wells is studied. It is shown that the Rashba mechanism leads to the cubic in quasimomentum spin-orbit splitting of the hole energy spectrum and the antilocalization behavior of…
We study the quantum correction to conductivity on the surface of cubic topological Kondo insulators with multiple Dirac bands. We consider the model of time-reversal invariant disorder which induces the scattering of the electrons within…
We present magneto-transport study in an InAs/GaSb double quantum well structure in the weak localization regime. As the charge carriers are depleted using a top gate electrode, we observe a crossover from weak anti-localization (WAL) to…
We suggest a new spin orientation mechanism for localized electrons: $dynamic~electron~spin~polarization~provided~by~nuclear~spin~fluctuations$. The angular momentum for the electrons is gained from the nuclear spin system via the hyperfine…
We study the electron spin relaxation in both symmetric and asymmetric GaAs/AlGaAs quantum wells (QWs) grown on (110) substrates in an external magnetic field B applied along the QW normal. The spin polarization is induced by circularly…
We study the effect of magnetic scattering on transport in a system with strong structural disorder, using exact finite size calculation of the low frequency optical conductivity. At weak electron-spin coupling spin disorder leads to a…
Spin-orbit interaction in semiconductor structures with broken space inversion symmetry leads to spin splitting of electron and hole states even in the absence of magnetic field. We discover that, beyond the Rashba and Dresselhaus…
Strong spin-orbit coupling in topological insulators results in the ubiquitously observed weak antilocalization feature in their magnetoresistance. Here we present magnetoresistance measurements in ultra thin films of the topological…
We have studied the electrical conductivity of the electron gas in parallel electric and magnetic fields directed along the plane of a parabolic quantum well (across the profile of the potential). We found a general expression for the…
Bulk inversion asymmetry (BIA) of III-V and II-VI semiconductor quantum wells is demonstrated by reflection experiments in magnetic field oriented in the structure plane. The linear in the magnetic field contribution to the reflection…
The weak localization is found for perfect periodic structures exhibiting deterministic classical diffusion. In particular, the velocity autocorrelation function develops a universal quantum power law decay at 4 times Ehrenfest time,…
We non-perturbatively analyze the effect of electron-electron interactions on weak localization (WL) in relatively short metallic conductors with a tunnel barrier. We demonstrate that the main effect of interactions is electron dephasing…
We investigate the intrinsic spin Hall effect in a quantum well semiconductor doped with magnetic impurities, as a means to manipulate the carriers' spin. Using a simple Hamiltonian with Rashba spin-orbit coupling and exchange interactions,…
We present a theoretical study of the anisotropy of the spin relaxation and decoherence in typical quantum wells with an arbitrary magnetic field. In such systems, the orientation of the magnetic field relative to the main crystallographic…
The effects of structural (Rashba) and bulk (Dresselhaus) spin-orbit interaction terms on the low-field magnetoresistance are investigated in high-quality two dimensional systems. The weak localization theory accounting for both of these…
We have observed a negative differential conductance with singular gate and source-drain bias dependences in a phosphorus-doped silicon quantum dot. Its origin is discussed within the framework of weak localization. By measuring the…
The presence of localized spins exerts a strong influence on quantum localization in doped semiconductors. At the same time carrier-mediated interactions between the localized spins are modified or even halted by carriers' localization. The…
We investigate the ballistic motion of electrons in III-V semiconductor quantum wells with Rashba spin-orbit coupling in a perpendicular magnetic field. Taking into account the full quantum dynamics of the problem, we explore the…
Changes dopant ion concentrations in the sides of a symmetric quantum well are known to create a random Rashba-type spin-orbit coupling. Here we demonstrate that, as a consequence, a finite size spin-Hall effect is also present. Our…
It is shown that the spin orientation of free electrons occurs in low-symmetry semiconductor structures if only the electron gas is driven out of thermal equilibrium with the crystal lattice. The proposed mechanism of such a thermal…