Related papers: Weak localization in low-symmetry quantum wells
At low temperatures, quantum corrections, originating from the interference of the many paths an electron may take between two points, tend to dominate the transport properties of two-dimensional conductors. These quantum corrections…
In a two-dimensional quantum dot in a GaAs heterostructure, the spin-orbit scattering rate is substantially reduced below the rate in a bulk two-dimensional electron gas [B.I. Halperin et al, Phys. Rev. Lett. 86, 2106 (2001)]. Such a…
The effect of weak localization on spin relaxation in a two-dimensional system with a spin-split spectrum is considered. It is shown that the spin relaxation slows down due to the interference of electron waves moving along closed paths in…
We compute analytically the weak (anti)localization correction to the Drude conductivity for electrons in tubular semiconductor systems of zinc blende type. We include linear Rashba and Dresselhaus spin-orbit coupling (SOC) and compare…
We compute the quantum correction due to weak localization for transport properties of disordered quasi-one-dimensional conductors, by integrating the Dorokhov-Mello-Pereyra-Kumar equation for the distribution of the transmission…
The effects of dynamic localization in a solid-state system -- a quantum dot -- are considered. The theory of weak dynamic localization is developed for non-interacting electrons in a closed quantum dot under arbitrary time-dependent…
Weak localization and weak anti-localization are quantum interference effects in quantum transport in a disordered electron system. Weak anti-localization enhances the conductivity and weak localization suppresses the conductivity with…
The weak localization (WL) contribution to the two-level correlation function is calculated for two-dimensional disordered conductors. Our analysis extends to the nondiffusive (ballistic) regime, where the elastic mean path is of order of…
Gate-controllable spin-orbit coupling is often one requisite for spintronic devices. For practical spin field-effect transistors, another essential requirement is ballistic spin transport, where the spin precession length is shorter than…
Collective transport through a multichannel disordered conductor in contact with charge-density-wave electrodes is theoretically investigated. The statistical distribution function of the threshold potential for charge-density wave sliding…
We develop a theory of spin orientation by electric current in (110)-grown semiconductor quantum wells. The controversy in the factor of two from two existed approaches is resolved by pointing out the importance of energy relaxation in this…
We study quantum interference corrections to the conductivity in (Ga,Mn)As ferromagnetic semiconductors using a model with disordered valence band holes coupled to localized Mn moments through a p-d kinetic-exchange interaction. We find…
The negative magnetoresistance due to weak localization is investigated in the two-dimensional metallic state of Si-MOS structures for high conductance values between 35 and 120 e^2/h. The extracted phase coherence time is equal to the…
We investigate the spin dynamics of electrons in quantum wells where the Rashba type of spin-orbit coupling is present in the form of random nanosize domains. We study the effect of magnetic field on the spin relaxation in these systems and…
Disorder scattering and spin-orbit coupling are together responsible for the diffusion and relaxation of spin-density in time-reversal invariant systems. We study spin-relaxation and diffusion in a two-dimensional electron gas with Rashba…
We put forward a theory of the weak localization in two dimensional graphene layers which explains experimentally observable transition between positive and negative magnetoresistance. Calculations are performed for the whole range of…
We report the observation of negative magnetoresistance in the ferromagnetic semiconductor GaMnAs at low temperatures ($T<3$ K) and low magnetic fields ($0< B <20$ mT). We attribute this effect to weak localization. Observation of weak…
The weak localization effect on a linear absorption spectrum is investigated for disordered s-wave superconductors. The vertex correction is incorporated into the response function in a way that is consistent with the weak localization…
We have performed the first experimental investigation of quantum interference corrections to the conductivity of a bilayer graphene structure. A negative magnetoresistance - a signature of weak localisation - is observed at different…
A change in a materials electrical resistance with magnetic field (magnetoresistance) results from quantum interference effects and, or spin-dependent transport, depending on materials properties and dimensionality. In disordered…