Antilocalization and spin-orbit coupling in hole strained GaAs/InGaAs/GaAs quantum well heterostructures

G. M. Minkov; A. A. Sherstobitov; A. V. Germanenko; O. E. Rut; V. A. Larionova; B. N. Zvonkov

doi:10.1103/PhysRevB.71.165312

Antilocalization and spin-orbit coupling in hole strained GaAs/InGaAs/GaAs quantum well heterostructures

Disordered Systems and Neural Networks 2008-12-02 v1

Authors: G. M. Minkov , A. A. Sherstobitov , A. V. Germanenko , O. E. Rut , V. A. Larionova , B. N. Zvonkov

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Abstract

Low-field magnetoresistance in p-type strained quantum wells is studied. It is shown that the Rashba mechanism leads to the cubic in quasimomentum spin-orbit splitting of the hole energy spectrum and the antilocalization behavior of low-field magnetoresistance is well described by the Hikami-Larkin-Nagaoka expression.

Antilocalization and spin-orbit coupling in hole strained GaAs/InGaAs/GaAs quantum well heterostructures

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