Related papers: Charge Offset Stability in Si Single Electron Devi…
We report on millikelvin charge sensing measurements of a silicon double-dot system fabricated by phosphorus ion implantation. An aluminum single-electron transistor (SET) is capacitively coupled to each of the implanted dots enabling the…
The current-voltage (I-V) characteristics of single-electron transistors (SETs) have been measured in various electromagnetic environments. Some SETs were biased with one-dimensional arrays of dc superconducting quantum interference devices…
We report a robust process for fabrication of surface-gated Si/SiGe quantum dots (QDs) with an integrated superconducting single-electron transistor (S-SET) charge sensor. A combination of a deep mesa etch and AlOx backfill is used to…
We systematically investigate the interplay between materials engineering, quantum transport, and low-frequency charge noise in silicon metal--oxide--semiconductor (SiMOS) quantum devices. By combining Hall-bar transport measurements with…
In this paper we report the measurement of conductance fluctuations in single crystals of Si made metallic by heavy doping (n \approx 2-2.5n_c, n_c being critical composition at Metal-Insulator transition). Since all dimensions (L) of the…
Despite the enormous progress achieved during the past decade, nanoelectronic devices based on two-dimensional (2D) semiconductors still suffer from a limited electrical stability. This limited stability has been shown to result from the…
An SDW antiferromagnetic (SDW-AF) low temperature phase transition is generally observe and the AF spin fluctuations are considered to play an important role for the superconductivity paring mechanism in FeAs superconductors. However, a…
It is shown that practically any physically relevant random distribution of offset charges destroys the Kosterlitz-Thouless-Berezinskii charge-unbinding phase transition in two dimensional normal and superconducting granular arrays and…
Whilst it has long been known that disorder profoundly affects transport properties, recent measurements on a series of solid solution 3d-transition metal alloys reveal two orders of magnitude variations in the residual resistivity. Using…
Alice electrodynamics (AED) is a theory of electrodynamics in which charge conjugation is a local gauge symmetry. In this paper we investigate a charge instability in alice electrodynamics in (2+1)-dimensions due to this local charge…
Semiconductor quantum dots provide a two-dimensional analogy for real atoms and show promise for the implementation of scalable quantum computers. Here, we investigate the charge configurations in a silicon metal-oxide-semiconductor double…
In this work, the threshold voltage instability of normally-off p-GaN high electron mobility transistors (HEMTs) has been investigated by monitoring the gate current density during device on-state. The origin of the gate current variations…
We demonstrate a gate dielectric engineering approach leveraging an ultrathin, atomic layer deposited (ALD) silicon oxide interfacial layer (SiL) between the amorphous oxide semiconductor (AOS) channel and the high-k gate dielectric. SiL…
In Si quantum dot systems, large magnetic field gradients are needed to implement spin rotations via electric dipole spin resonance (EDSR). By increasing the effective electron dipole, flopping mode qubits can provide faster gates with…
Spin qubits based on Si and Si$_{1-x}$Ge$_{x}$ quantum dot architectures exhibit among the best coherence times of competing quantum computing technologies, yet they still suffer from charge noise that limit their qubit gate fidelities.…
We report on low-temperature electronic transport measurements of a silicon metal-oxide-semiconductor quantum dot, with independent gate control of electron densities in the leads and the quantum dot island. This architecture allows the dot…
We report a new method to study two level fluctuators (TLFs) by measuring the offset charge induced after applying a sudden step voltage to the gate electrode of a single electron transistor. The offset charge is measured for more than 20…
Imbalanced voltage sharing during the turn-off transient is a challenge for series-connected silicon carbide (SiC) MOSFET application. This article first discusses the influence of the gate-drain discharge deviation on the voltage imbalance…
The single electron transistor (SET) offers unparalled opportunities as a nano-scale electrometer, capable of measuring sub-electron charge variations. SETs have been proposed for read-out schema in solid-state quantum computing where…
We investigate carrier transport in a single 22 nm-thick double-gated Si quantum well device, which has independent contacts to electrons and holes. Conductance, Hall density and Hall mobility are mapped in a broad double-gate voltage…