Related papers: Scanning-gate-induced effects and spatial mapping …
The electrostatic behavior of a prototypical three-dimensional topological insulator Bi$_2$Se$_3$(111) is investigated by a scanning tunneling microscopy (STM) study of the distribution of Rb atoms adsorbed on the surface. The positively…
To realize braiding of vortex lines and understand the basic properties of the energy landscape for vortex motion, precise manipulation of superconducting vortices on the nanoscale is required. Here, we reveal that a localized trapping…
We perform scanning gate microscopy on individual suspended carbon nanotube quantum dots. The size and position of the quantum dots can be visually identified from the concentric high conductance rings. For the ultra clean devices used in…
We have used the scanning charged tip of an Atomic Force Microscope (AFM) to produce images of the conductance variation of a quantised 1D ballistic channel. The channel was formed using electron beam defined 700 nm wide split gate surface…
A systematic theory of the conductance measurements of non-invasive (weak probe) scanning gate microscopy is presented that provides an interpretation of what precisely is being measured. A scattering approach is used to derive explicit…
When thinned down to the atomic scale, many layered van der Waals materials exhibit an interesting evolution of their electronic properties, whose main aspects can be accounted for by changes in the single-particle band structure. Phenomena…
We study the effect of a local potential shift induced by a side electrode on the edge modes at the boundary between gapped and ungapped bilayer graphene. A potential shift close to the gapped-ungapped boundary causes the emergence of…
We measure the conductance of a quantum point contact (QPC) while the biased tip of a scanning probe microscope induces a depleted region in the electron gas underneath. At finite magnetic field we find plateaus in the real-space maps of…
Graphene is an attractive electrode material to contact nanostructures down to the molecular scale since it can be gated electrostatically. Gating can be used to control the doping and the energy level alignment in the nanojunction, thereby…
The ability to directly observe electronic band structure in modern nanoscale field-effect devices could transform understanding of their physics and function. One could, for example, visualize local changes in the electrical and chemical…
Topological insulators have been predicted to exhibit a variety of interesting phenomena including a quantized magnetoelectric response and novel spintronics effects due to spin textures on their surfaces. However, experimental observation…
We utilize experimental tools such as conductive atomic force microscopy and electrostatic force microscopy on photo-excited arrays of gold nanoparticles on indium tin oxide substrate. The nanoparticles are partially covered by a thin…
We study the effects of electrostatic gating on the magnetization auto-oscillations induced by the local injection of electric current into a ferromagnet/heavy metal bilayer. We find that the characteristic currents required for the…
We consider a laterally confined two-dimensional electron gas (2DEG), placed inside a gyrotropic cavity. Splitting of the circularly polarized electromagnetic modes leads to the emergence of the ground state spontaneous magnetization,…
We consider scanning gate microscopy imaging of the double slit interference for a pair of quantum point contacts (QPCs) defined within the two-dimensional electron gas. The interference is clearly present in the scattered electron wave…
Scanning tunneling spectroscopy requires the application of a potential difference between the sample and a tip. In metal-vacuum-metal junctions, one can safely assume that the potential is constant along the metallic substrate. Here, we…
We investigate the electrostatic effects in doped topological insulators by developing a self consistent scheme for an interacting tight binding model. The presence of bulk carriers, in addition to surface electrons, generates an intrinsic…
Gate-layouts of spin qubit devices are commonly adapted from previous successful devices. As qubit numbers and the device complexity increase, modelling new device layouts and optimizing for yield and performance becomes necessary.…
Electronic nematic phases have been proposed to occur in various correlated electron systems and were recently claimed to have been detected in scanning tunneling microscopy (STM) conductance maps of the pseudogap states of the cuprate…
Electrostatic gating lies in the heart of modern FET-based integrated circuits. Usually, the gate electrode has to be placed very close to the conduction channel, typically a few nanometers, in order to achieve efficient tunability.…