Related papers: Self-consistent Capacitance-Voltage Characterizati…
Gate-tunable transmon qubits are based on quantum conductors used as weak links within hybrid Josephson junctions. These gatemons have been implemented in just a handful of systems, all relying on extended conductors, namely epitaxial…
We use quantum process tomography to characterize a full universal set of all-microwave gates on two superconducting single-frequency single-junction transmon qubits. All extracted gate fidelities, including those for Clifford group…
Multiscale simulation approaches are needed in order to address scientific and technological questions in the rapidly developing field of carbon nanotube electronics. In this paper, we describe an effort underway to develop a comprehensive…
Scaling of semiconductor devices has reached a stage where it has become absolutely imperative to consider the quantum mechanical aspects of transport in these ultra small devices. In these simulations, often one excludes a rigorous band…
Electronic devices that work in the quantum regime often employ hybrid nanostructures to bring about a nonlinear behaviour. The nonlinearity that these can provide has proven to be useful, in particular, for applications in quantum…
We report on the influence of low gamma irradiation (10^4 Gy) on the noise properties of individual carbon nanotube (CNT) field-effect transistors (FETs) with different gate configurations and two different dielectric layers, SiO2 and…
Recent proposals using heterostructures of superconducting and either topologically insulating or semiconducting layers have been put forth as possible platforms for topological quantum computation. These systems are predicted to contain…
High-quality electrostatic gating is a fundamental ingredient for successful semiconducting device physics, and a key element of realizing clean quantum transport. Inspired by the widespread improvement of transport quality when…
A model is developed for a detailed investigation of the current flowing through a cylindrical nanosize MOSFET with a close gate electrode. The quantum mechanical features of the lateral charge transport are described by Wigner distribution…
We investigate the controllability of quantum electrons trapped in a two-dimensional device, typically a MOS field-effect transistor. The problem is modeled by the Schr\"odinger equation in a bounded domain coupled to the Poisson equation…
We propose and numerically simulate novel reconfigurable logic gates employing spin metal-oxide-semiconductor field-effect transistors (spin MOSFETs). The output characteristics of the spin MOSFETs depend on the relative magnetization…
We investigate gate-defined quantum dots in silicon on insulator nanowire field-effect transistors fabricated using a foundry-compatible fully-depleted silicon-on-insulator (FD-SOI) process. A series of split gates wrapped over the silicon…
We measure the small signal, 1 GHz source-drain dynamical conductance of a back-gated single-walled carbon nanotube field effect transistor at both low and high dc bias voltages. At all bias voltages, the intrinsic device dynamical…
This work presents a physics based compact model for SiC power MOSFETs that accurately describes the I-V characteristics up to large voltages and currents. Charge-based formulations accounting for the different physics of SiC power MOSFETs…
The advanced nanoscale integration available in silicon complementary metal-oxide-semiconductor (CMOS) technology provides a key motivation for its use in spin-based quantum computing applications. Initial demonstrations of quantum dot…
Semiconductor-based superconducting qubits offer a versatile platform for studying hybrid quantum devices in circuit quantum electrodynamics (cQED) architecture. Most of these cQED experiments utilize coplanar waveguides, where the…
We perform the characterization and modeling of a floating-gate device realized with a commercial 350-nm CMOS technology at cryogenic temperature. The programmability of the device offers a solution in the realization of a precise and…
State-of-the-art carbon nanotube field-effect transistors (CNFETs) behave as Schottky barrier (SB)-modulated transistors. It is known that vertical scaling of the gate oxide significantly improves the performance of these devices. However,…
We show that carbon nanotube transistors exhibit scaling that is qualitatively different than conventional transistors. The performance depends in an unexpected way on both the thickness and the dielectric constant of the gate oxide.…
The design of a 1 micrometer gate length depletion-mode InSb quantum-well field-effect transistor (QWFET) with a 10 nm-thick Al2O3 gate dielectric has been optimized using a quantum corrected self-consistent Schrodinger-Poisson (QCSP) and…