Related papers: Landau level spin diode in a GaAs two dimensional …
In the quantum Hall regime, the longitudinal resistivity $\rho_{xx}$ plotted as a density--magnetic-field ($n_{2D}-B$) diagram displays ringlike structures due to the crossings of two sets of spin split Landau levels from different subbands…
The electronic properties of a graphene monolayer in a magnetic and a strain-induced pseudo-magnetic field are studied in the presence of spin-orbit interactions (SOI) that are artificially enhanced, e.g., by suitable adatom deposition. For…
We implement silicon quantum dot devices with two layers of gate electrodes using a self-alignment technique, which allows for ultra-small gate lengths and intrinsically perfect layer-to-layer alignment. In a double quantum dot system, we…
We report measurements of spin susceptibility of a two-dimensional hole gas confined at an GaAs/AlGaAs interface in density range from 2.8 x 10^10 to 6.5 x 10^10 cm-2. We used the method of spin polarization of carriers in parallel magnetic…
Usually the Landau levels are given by (n+1/2)\hbar\omega_c with \hbar\omega_c=eB/mc. We find that there are clusters of electrons with localization so that the orbital angular momentum is not zero. There are interactions which transfer the…
This work reports the three-band structure associated with a Lieb lattice with arbitrary nearest and next-nearest neighbors hopping interactions. For specific configurations, the system admits a flat band located between two dispersion…
We have demonstrated by electroluminescence the injection of spin polarized electrons through Co/Al2O3/GaAs tunnel barrier into p-doped InAs/GaAs quantum dots embedded in a PIN GaAs light emitting diode. The spin relaxation processes in the…
We develop a theoretical framework for Landau levels in quasi-periodic twisted bilayer graphene at a $30^\circ$ twist angle, a system without translational symmetry but possessing 12-fold rotational symmetry. Using a quasi-band formalism,…
We theoretically study the dynamic polarization of lattice nuclear spins in GaAs double quantum dots containing two electrons. In our prior work [Phys. Rev. Lett. 104, 226807 (2010)] we identified three regimes of long-term dynamics,…
We study a rapidly rotating gas of unpolarized spin-1/2 ultracold fermions in the two-dimensional regime when all atoms reside in the lowest Landau level. Due to the presence of the spin degree of freedom both s-wave and p-wave interactions…
In the review article the influence of the Rashba spin-orbit coupling on the two-dimensional electrons and holes in a strong perpendicular magnetic field is described in Landau gauge using the spinor-type two-component wave functions with…
We theoretically investigate the controlled dynamic polarization of lattice nuclear spins in GaAs double quantum dots containing two electrons. Three regimes of long-term dynamics are identified, including the build up of a large difference…
GaAs/AlGaAs quantum dots grown by in-situ droplet etching and nanohole infilling offer a combination of strong charge confinement, optical efficiency, and spatial symmetry required for polarization entanglement and spin-photon interface.…
This work elucidates the novel behavior found in a two-dimensional electron gas (2DEG) under a tilted magnetic field in which the field's angle becomes the dominant factor in tuning the spin-splitting rather than the strength of the…
Electron-spin relaxation at different surfaces of p-doped GaAs is investigated by means of spin, time and energy resolved 2-photon photoemission. These results are contrasted with bulk results obtained by time-resolved Faraday rotation…
We describe measurements of spin dynamics in the two-dimensional electron gas in GaAs/GaAlAs quantum wells. Optical techniques, including transient spin-grating spectroscopy, are used to probe the relaxation rates of spin polarization waves…
Achieving significant doping in GaAs/AlAs core/shell nanowires (NWs) is of considerable technological importance but remains a challenge due to the amphoteric behavior of the dopant atoms. Here we show that placing a narrow GaAs quantum…
A technology is reviewed which allows one to produce quasi-lateral 2D electron and hole gas junctions of arbitrary shape. It may be implemented in a variety of semiconductor heterostructures. Here we concentrate on its realization in the…
We have measured the carrier spin dynamics in p-doped InAs/GaAs quantum dots by pump-probe photo-induced circular dichroism and time-resolved photoluminescence experiments. We show that the hole spin dephasing is controlled by the hyperfine…
The possible existence of the bound states of the interacting two-dimensional (2D) magnetoexcitons in the lowest Landau levels (LLLs) approximation was investigated using the Landau gauge description. The magnetoexcitons taking part in the…