Related papers: Dual Metal-Gate Planar Field-Effect Transistor for…

We report the realization of field-effect transistors (FETs) made with chemically- synthesized layered two dimensional (2D) crystal semiconductor WS2. The 2D Schottky-barrier FETs demonstrate ambipolar behavior and a high (~105x) on/off…

Spin field effect transistors (SpinFET) are an iconic class of spintronic devices that exploit gate tuned spin-orbit interaction in semiconductor channels interposed between ferromagnetic source and drain contacts to elicit transistor…

State-of-the-art carbon nanotube field-effect transistors (CNFETs) behave as Schottky barrier (SB)-modulated transistors. It is known that vertical scaling of the gate oxide significantly improves the performance of these devices. However,…

In this paper we have developed a two dimensional (2D) analytical model for surface potential and drain current for a long channel Dual Material Gate (DMG) Silicon-on-Insulator (SOI) Tunneling Field Effect Transistor (TFET). This model…

We investigate electronic transport properties of Schottky-barrier field-effect transistors (FET) based on double-walled carbon nanotubes (DWNT) with a semiconducting outer shell and a metallic inner one. These kind of DWNT-FET show…

We report the performance of field-effect transistors (FETs), comprised of mono-layer of recently synthesized layered two-dimensional MoSi2N_4 as channel material, using the first principles quantum transport simulations. The devices'…

The charge doped into a semiconductor in a field effect transistor (FET) is generally confined to the interface of the semiconductor. A planar step at the interface causes a potential drop due to the strong electric field of the FET, which…

We present a physics-based circuit-compatible model for double-gated two-dimensional semiconductor based field effect transistors, which provides explicit expressions for the drain current, terminal charges and intrinsic capacitances. The…

We present a physics-based compact model for two-dimensional (2D) field-effect transistors (FETs) based on monolayer semiconductors such as MoS2. A semi-classical transport approach is appropriate for the 2D channel, enabling simplified…

Difficulties in obtaining high-performance p-type transistors and gate insulator charge-trapping effects present two major challenges for III-V complementary metal-oxide semiconductor (CMOS) electronics. We report a p-GaAs nanowire…

Short channel (~80 nm) n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) with potassium (K) doped source and drain regions and high-k gate dielectrics (ALD HfO2) are obtained. For nanotubes with diameter ~ 1.6 nm…

We report on fabrication of novel field-effect transistors (FETs) based on transition metal dichalcogenides. The unique structure of single crystals of these layered inorganic semiconductors enables fabrication of FETs with intrinsically…

Spin-gapless semiconductors (SGSs) are a promising class of materials for spintronic applications, enabling functions beyond conventional electronics. This study introduces a novel design for multifunctional spintronic field-effect…

The design of beta-Ga2O3-based modulation doped field effect transistors (MODFETs) is discussed with a focus on the role of self-heating and resultant modification of the electron mobility profile. Temperature- and doping-dependent model of…

High performance p- and n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) are obtained by using high and low work function metals, Pd and Al as source/drain (S/D) electrodes respectively. Ohmic contacts made to…

We fabricate and characterize dual-gated graphene field-effect transistors (FETs) using Al2O3 as top-gate dielectric. We use a thin Al film as a nucleation layer to enable the atomic layer deposition of Al2O3. Our devices show mobility…

Carbon nanotube field-effect transistors (FETs) with passivated coaxial gate structures have been fabricated after growth of contacted suspended single wall nanotubes (SWNTs) and subsequent coating with gate dielectrics. Electron…

We explore solid electrolytes for electrostatic gating using field-effect transistors (FETs) in which thin WSe$_2$ crystals are exfoliated and transferred onto a lithium-ion conducting glass ceramic substrate. For negative gate voltages…

Solution processed field-effect transistors based on single crystalline silicon nanowires (Si NWs) with metal Schottky contacts are demonstrated. The semiconducting layer was deposited from a nanowire ink formulation at room temperature.…

Paraelectrical tuning of a charge carrier density as high as 10$^{13}$\,cm$^{-2}$ in the presence of a high electronic carrier mobility on the delicate surfaces of correlated oxides, is a key to the technological breakthrough of a field…