Related papers: Conditional control of donor nuclear spins in sili…
We report Stark shift measurements for 121Sb donor electron spins in silicon using pulsed electron spin resonance. Interdigitated metal gates on top of a Sb-implanted 28Si epi-layer are used to apply electric fields. Two Stark effects are…
We propose a method to electrically control electron spins in donor-based qubits in silicon. By taking advantage of the hyperfine coupling difference between a single-donor and a two-donor quantum dot, spin rotation can be driven by…
The electronic and nuclear spin degrees of freedom for donor impurities in semiconductors form ultra coherent two-level systems that are useful for quantum information applications. Spins naturally have magnetic dipoles, so alternating…
Nuclear spins of dopant atoms in semiconductors are promising candidates as quantum bits, due to the long lifetime of their quantum states. Conventionally, coherent control of nuclear spins is done using ac magnetic fields. Using the…
In spin-based quantum information processing devices, the presence of control and detection circuitry can change the local environment of a spin by introducing strain and electric fields, altering its resonant frequencies. These resonance…
Donor electron spins in semiconductors make exceptional quantum bits because of their long coherence times and compatibility with industrial fabrication techniques. Despite many advances in donor-based qubit technology, it remains difficult…
We study the effect of a static electric field on lithium donor spins in silicon. The anisotropy of the effective mass leads to the anisotropy of the quadratic Stark susceptibility, which we determined using the Dalgarno-Lewis exact…
In this article, we study control of electron-nuclear spin dynamics at magnetic field strengths where the Larmor frequency of the nucleus is comparable to the hyperfine coupling strength. The quantization axis for the nuclear spin differs…
Phosphorus donor nuclear spins in silicon couple weakly to the environment making them promising candidates for high-fidelity qubits. The state of a donor nuclear spin qubit can be manipulated and read out using its hyperfine interaction…
Spectral diffusion arising from $^{29}$Si nuclear spin flip-flops, known to be a primary source of electron spin decoherence in silicon, is also predicted to limit the coherence times of neutral donor nuclear spins in silicon. Here, the…
Electrical detection of spins is an essential tool in understanding the dynamics of spins in semiconductor devices, providing valuable insights for applications ranging from optoelectronics and spintronics to quantum information processing.…
We experimentally study the coupling of Group V donor spins in silicon to mechanical strain, and measure strain-induced frequency shifts which are linear in strain, in contrast to the quadratic dependence predicted by the valley…
We develop an efficient back gate for silicon-on-insulator (SOI) devices operating at cryogenic temperatures, and measure the quadratic hyperfine Stark shift parameter of arsenic donors in isotopically purified $^{28}$Si-SOI layers using…
We present a complete theoretical treatment of Stark effects in doped silicon, whose predictions are supported by experimental measurements. A multi-valley effective mass theory, dealing non-perturbatively with valley-orbit interactions…
The Stark shift of the hyperfine coupling constant is investigated for a P donor in Si far below the ionization regime in the presence of interfaces using Tight-binding and Band Minima Basis approaches and compared to the recent precision…
Coupled electron-nuclear spins represent a promising quantum system, where the optically induced electron spin polarization can be dynamically transferred to nuclear spins via the hyperfine interaction. Most experiments on dynamic nuclear…
We use the nuclear spin coherence of $^{31}$P donors in $^{28}$Si to determine flip-flop rates of donor electron spins. Isotopically purified $^{28}$Si crystals minimize the number of $^{29}$Si flip-flops, and measurements at 1.7 K suppress…
A major challenge in using spins in the solid state for quantum technologies is protecting them from sources of decoherence. This can be addressed, to varying degrees, by improving material purity or isotopic composition for example, or…
We study the low-temperature dynamics of a shallow donor, e.g., $^{31}$P, impurity electron spin in silicon, interacting with the bath of nuclear spins of the $^{29}$Si isotope. For small applied magnetic fields, the electron spin…
We show how to achieve optical, spin-selective transitions from the ground state to excited orbital states of group-V donors (P, As, Sb, Bi) in silicon. We consider two approaches based on either resonant, far-infrared (IR) transitions of…