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Semiconductor hole-spin qubits offer a promising route to quantum computation due to their weak hyperfine interaction, and strong intrinsic spin-orbit coupling enabling electric control of qubits. Scalable architectures, however, require…

Quantum Physics · Physics 2026-05-15 Madhumita Sarkar , Roopayan Ghosh , Charles G. Smith , Maksym Myronov , Sougato Bose

We design and analyze a solid state qubit based on electron spin and controlled by electrical means. The coded qubit is composed of a three-electron complex in three tunable gated quantum dots. The two logical states of a qubit, |0L> and…

Materials Science · Physics 2009-11-10 Pawel Hawrylak , Marek Korkusinski

The size of silicon transistors used in microelectronic devices is shrinking to the level where quantum effects become important. While this presents a significant challenge for the further scaling of microprocessors, it provides the…

A semiconductor nanowire quantum dot with strong spin-orbit coupling (SOC) can be used to achieve a spin-orbit qubit. In contrast to a spin qubit, the spin-orbit qubit can respond to an external ac electric field, an effect called…

Mesoscale and Nanoscale Physics · Physics 2013-09-05 Rui Li , J. Q. You , C. P. Sun , Franco Nori

Isolated spins in semiconductors provide a promising platform to explore quantum mechanical coherence and develop engineered quantum systems. Silicon has attracted great interest as a host material for developing spin qubits because of its…

Mesoscale and Nanoscale Physics · Physics 2015-10-29 Dohun Kim , D. R. Ward , C. B. Simmons , D. E. Savage , M. G. Lagally , Mark Friesen , S. N. Coppersmith , Mark A. Eriksson

In the "flopping-mode" regime of electron spin resonance, a single electron confined in a double quantum dot is electrically driven in the presence of a magnetic field gradient. The increased dipole moment of the charge in the flopping mode…

Mesoscale and Nanoscale Physics · Physics 2025-03-14 Steve M. Young , Mitchell Brickson , Jason R. Petta , N. Tobias Jacobson

The spin states of single electrons in gate-defined quantum dots satisfy crucial requirements for a practical quantum computer. These include extremely long coherence times, high-fidelity quantum operation, and the ability to shuttle…

Scalable spin qubit devices will likely require long-range qubit interconnects. We propose to create such an interconnect with a resistive topgate. The topgate is positively biased, to form a channel between the two dots; an end-to-end…

Mesoscale and Nanoscale Physics · Physics 2026-02-05 Christopher David White , Anthony Sigillito , Michael J. Gullans

The electronic and nuclear spin degrees of freedom for donor impurities in semiconductors form ultra coherent two-level systems that are useful for quantum information applications. Spins naturally have magnetic dipoles, so alternating…

Quantum Physics · Physics 2017-01-25 A. J. Sigillito , A. M. Tyryshkin , T. Schenkel , A. A. Houck , S. A. Lyon

Single nuclear spins in the solid state have long been envisaged as a platform for quantum computing, due to their long coherence times and excellent controllability. Measurements can be performed via localised electrons, for example those…

We study theoretically the phonon-induced relaxation and decoherence of spin states of two electrons in a lateral double quantum dot in a SiGe/Si/SiGe heterostructure. We consider two types of singlet-triplet spin qubits and calculate their…

Mesoscale and Nanoscale Physics · Physics 2018-05-29 Viktoriia Kornich , Christoph Kloeffel , Daniel Loss

We investigate coherent control of a single electron trapped in a semiconductor quantum dot. Control is enabled with a strong laser field detuned with respect to the electron light-hole optical transitions. For a realistic experimental…

Other Condensed Matter · Physics 2007-05-23 Francois Dubin , Gavin K. Brennen

Silicon quantum dots are considered an excellent platform for spin qubits, partly due to their weak spin-orbit interaction. However, the sharp interfaces in the heterostructures induce a small but significant spin-orbit interaction which…

Single-electron spin qubits employ magnetic fields on the order of 1 Tesla or above to enable quantum state readout via spin-dependent-tunnelling. This requires demanding microwave engineering for coherent spin resonance control and…

Microwave-frequency superconducting resonators are ideally suited to perform dispersive qubit readout, to mediate two-qubit gates, and to shuttle states between distant quantum systems. A prerequisite for these applications is a strong…

Mesoscale and Nanoscale Physics · Physics 2016-10-18 Félix Beaudoin , Dany Lachance-Quirion , W. A. Coish , Michel Pioro-Ladrière

We study a vertical double quantum dot (DQD) in a Si/Si$_{1-x}$Ge$_x$/Si double-well heterostructure for full electrical control of electron Loss-DiVincenzo (LD) spin qubits, using realistic device modeling and numerical simulations. Due to…

Mesoscale and Nanoscale Physics · Physics 2025-12-24 Abhikbrata Sarkar , Daniel Loss

We fabricated Quantum Dot (QD) devices using a standard SOI CMOS process flow, and demonstrated that the spin of confined electrons could be controlled via a local electrical-field excitation, owing to inter-valley spin-orbit coupling. We…

An electron spin qubit in silicon quantum dots holds promise for quantum information processing due to the scalability and long coherence. An essential ingredient to recent progress is the employment of micromagnets. They generate a…

Mesoscale and Nanoscale Physics · Physics 2021-10-26 Peihao Huang , Xuedong Hu

An important goal in quantum information processing is to reduce the duration of quantum-logical operations. Motivated by this, we provide a theoretical analysis of electrically induced fast dynamics of a single-electron spin-orbit qubit.…

Mesoscale and Nanoscale Physics · Physics 2018-06-27 Máté Tibor Veszeli , András Pályi

We successfully demonstrated experimentally the electrical-field-mediated control of the spin of electrons confined in an SOI Quantum Dot (QD) device fabricated with a standard CMOS process flow. Furthermore, we show that the Back-Gate…