Related papers: Negative differential photoconductance in InGaN/Ga…
Single photon emission was observed from site-controlled InGaN/GaN quantum dots. The single-photon nature of the emission was verified by the second-order correlation function up to 90 K, the highest temperature to date for site-controlled…
This paper presents the design, fabrication, and experimental characterization of monolithically integrated p-n junction InGaN/GaN multiple quantum well diodes (MQWDs) and suspended waveguides. Suspended MQWDs can be used as transmitters…
Excitation of a topological insulator by a high-frequency electric field of a laser radiation leads to a dc electric current in the helical edge channel whose direction and magnitude are sensitive to the radiation polarization and depend on…
A microscopic approach that is based on the multisubband semiconductor Bloch equations formulated in the basis of a 14-band ${\mathbf k} \cdot {\mathbf p}$ model is employed to compute the temporal dynamics of photocurrents in GaAs quantum…
Theoretical and numerical calculations of the optical absorption spectra of excitons interacting with longitudinal-optical phonons in quasi-2D polar semiconductors are presented. In II-VI semiconductor quantum wells, exciton binding energy…
A highly superlinear in radiation intensity photoconductance induced by terahertz laser radiation with moderate intensities has been observed in quantum point contacts made of GaAs quantum wells operating in the deep tunneling regime. For…
Excitons in semiconductors may form correlated phases at low temperatures. We report the observation of an exciton liquid in GaAs/AlGaAs coupled quantum wells. Above a critical density and below a critical temperature the photogenerated…
In this paper we present a detailed analysis of the structural, electronic, and optical properties of an $m$-plane (In,Ga)N/GaN quantum well structure grown by metal organic vapor phase epitaxy. The sample has been structurally…
Indirect excitons in coupled quantum wells have long radiative lifetimes and form a cold quasi-two-dimensional population suitable for studying collective quantum effects. Here we report the observation of the exciton Mott transition from…
We perform scanning photocurrent microscopy on WS2 ionic liquid-gated field effect transistors exhibiting high-quality ambipolar transport. By properly biasing the gate electrode we can invert the sign of the photocurrent showing that the…
We have measured the electromagnetic response of micron-size isolated mesoscopic GaAs/GaAlAs square dots down to temperature T=16mK, by coupling them to an electromagnetic micro-resonator. Both dissipative and non dissipative responses…
When a high electron mobility transistor is illuminated, the absorbed photons excite electron-hole pairs. The generated pairs are separated by the built in field in such a way that the electrons end up in the quantum well generating a…
We propose a dynamic mechanism for the reversible regulation of photosynthesis in varying light environments. We employ a three-level quantum model to take into account the correlations between charge donors and charge acceptors immediately…
The realization of reliable single photon emitters operating at high temperature and located at predetermined positions still presents a major challenge for the development of solid-state systems for quantum light applications. We…
The operation of quantum dots at highest possible temperatures is desirable for many applications. Capacitance-voltage spectroscopy (C(V)-spectroscopy) measurements are an established instrument to analyze the electronic structure and…
A giant built-in electric field in the growth direction makes excitons in wide GaN/(Al, Ga)N quantum wells spatially indirect even in the absence of any external bias. Significant densities of indirect excitons can accumulate in…
We investigate the intrinsic microscopic mechanism of photon upconversion in air-suspended single-walled carbon nanotubes through photoluminescence and upconversion photoluminescence spectroscopy. Nearly linear excitation power dependence…
Electroluminescence properties of epitaxially grown n-ZnO/p-GaN pn-heterojunctions are investigated as functions of applied bias and temperature. The study reveals the existence of indirect interfacial excitons at sufficiently low…
Optoelectronic measurements of carbon nanotube transistors have shown a wide variety of sensitivites to the incident light. Direct photocurrent processes compete with a number of extrinsic mechanisms. Here we show that visible light…
The design of some optical devices such as semiconductor optical amplifiers for telecommunication applications requires polarization-insensitive optical emission at the long wavelengths (1300-1550 nm). Self-assembled InAs/GaAs quantum dots…