Related papers: Negative differential photoconductance in InGaN/Ga…
GaN and the heterostructures are attractive in condensed matter science and applications for electronic devices. We measure the electron transport in GaN/AlGaN field-effect transistors (FETs) at cryogenic temperature. We observe formation…
Steady-state access to intraband transitions in colloidal quantum dots (CQDs), via heavy doping, allows exploiting the electromagnetic spectrum at energies below the band gap. CQD intraband optoelectronics opens up a new path to cheap mid-…
In recent years, there has been a growing demand for room-temperature visible single-photon emission from InGaN nanowire-quantum-dots (NWQDs) due to its potential in developing quantum computing, sensing, and communication technologies.…
The thermoelectric effect in a quantum dot system connected to two electron reservoirs in the presence of a photon cavity is investigated using a quantum master equation in the steady-state regime. If a quantized photon field is applied to…
Quantum systems as used for quantum computation or quantum sensing are nowadays often realized in solid state devices as e.g. complex Josephson circuits or coupled quantum-dot systems. Condensed matter as an environment influences heavily…
GaN defect-based quantum emitters show significant potential for quantum information technologies, yet their intrinsic nature is not fully understood. In this work, we present results on the temperature-dependent emission polarization of…
We investigate low-temperature transport through single InAs quantum wells and broken-gap InAs/GaSb double quantum wells. Non-local measurements in the regime beyond bulk pinch-off confirm the presence of edge conduction in InAs quantum…
Quantum well (QW) structures are widely used in lasers, semiconductor optical amplifiers, modulators, enabling their monolithic integration on the same substrate. As optoelectronic systems evolve to meet the growing bandwidth demands in the…
The photodetachement of H- in a quantum well is investigated based on closed orbit theory. It is found the distances between the ion and the two hard walls modulate the cross section of photodetachment. For the hard walls perpendicular the…
The electric conductivity behavior in the single and double tunnel-coupled quantum wells (QW) with different doping profile caused by impact of short pulses of the strong longitudinal (in the quantum wells plane) electric field has been…
Low-dimensional photoconductors have extraordinarily high photoresponse and gain, which can be modulated by gate voltages as shown in literature. However, the physics of gate modulation remains elusive. In this work, we investigated the…
We theoretically investigate laser induced quantum transport in a two-level quantum dot attached to electric contacts. Our approach, based on nonequilibrium Green function technique, allows to include thermal effects on the photon-induced…
Cathodoluminescence spectra employing a shadow mask technique of InGaN layers grown by metal organic chemical vapor deposition on Si(111) substrates are reported. Sharp lines originating from InGaN quantum dots are observed. Temperature…
Modulation-doped GaAs v-groove quantum wires (QWRs) have been fabricated with novel electrical contacts made to two-dimensional electron-gas (2DEG) reservoirs. Here, we present longitudinal photocurrent (photoconductivity/PC) spectroscopy…
We induce ultrafast magneto-photocurrents in a GaAs crystal employing interband excitation with femtosecond laser pulses at room temperature and non-invasively separate surface and bulk contributions to the overall current response. The…
We study the characteristics of photogenerated electron-hole plasma in optically pumped graphene layers at elevated (room) temperatures when the interband and intraband processes of emission and absorption of optical phonons play a crucial…
Most contemporary architectures of photodetectors based on two-dimensional materials include global gates for carrier density control and local p-n junctions in the channel. We study the dependence of photocurrent in such detectors on the…
Shallow GaAs/InGaAs/GaAs quantum well structures with and without a three monolayer thick AlAs central barrier have been investigated for different well widths and Si doping levels. The transport parameters are determined by resistivity…
Q. Ma et al.[1] recently reported a strong photocurrent associated with charge neutrality in graphene devices with non-uniform geometries, which they interpreted as an intrinsic photoresponse enhanced by the momentum non-relaxing nature of…
We present far-infrared magnetospectroscopy measurements of a HgTe quantum well in the inverted band structure regime over the temperature range of 2 to 60 K. The particularly low electron concentration enables us to probe the temperature…