Related papers: 3D Vertical Dual-Layer Oxide Memristive Devices fo…
We present a design-scheme for ultra-low power neuromorphic hardware using emerging spin-devices. We propose device models for 'neuron', based on lateral spin valves and domain wall magnets that can operate at ultra-low terminal voltage of…
Understanding the physical and chemical mechanisms occurring during the forming process and operation of an organic resistive memory device is a major issue for better performances. Various mechanisms were suggested in vertically stacked…
The growing energy demands of information and communication technologies, driven by data-intensive computing and the von Neumann bottleneck, underscore the need for energy-efficient alternatives. Resistive random-access memory (RRAM)…
While two-terminal HfOX (x<2) memristor devices have been studied for ion transport and current evolution, there have been limited reports on the effect of the long-range thermal environment on their performance. In this work,…
The emerging paradigm of abundant-data computing requires real-time analytics on enormous quantities of data collected by a mushrooming network of sensors. Todays computing technology, however, cannot scale to satisfy such big data…
We develop a theory of percolation with plasticity systems (PWPs) rendering properties of interest for neuromorphic computing. Unlike the standard percolation between two large electrodes, they have multiple ($N\gg 1$) interfaces and…
Neuromorphic computing (NC) is considered as a potential vehicle for implementing energy-efficient artificial intelligence (AI). To realize NC, several materials systems are being investigated. Among them, the spin-orbit torque (SOT)…
In electrochemical systems, the structure of electrical double layers (EDLs) near electrode surfaces is crucial for energy conversion and storage functions. While the electrodes in real-world systems are usually heterogeneous, to date the…
This paper gives an overview of recent progress in the brain inspired computing field with a focus on implementation using emerging memories as electronic synapses. Design considerations and challenges such as requirements and design…
We introduce the percolation with plasticity (PWP) systems that exhibit neuromorphic functionalities including multi-valued memory, random number generation, matrix-vector multiplication, and associative learning. PWP systems have multiple…
The massive parallel approach of neuromorphic circuits leads to effective methods for solving complex problems. It has turned out that resistive switching devices with a continuous resistance range are potential candidates for such…
Few-layer ReS2 field-effect transistors (FET) with a local floating gate (FG) of monolayer graphene separated by a thin h-BN tunnel layer for application to a non-volatile memory (NVM) device is designed and investigated. FG-NVM devices…
Layered two-dimensional (2D) materials provide unique structural features, such as physical gaps between their layers that are only connected through van der Waals (vdW) forces. These vdW gaps can guide the migration of intercalated ions…
Two-dimensional (2D) crystals, such as graphene, hexagonal boron nitride and transitional metal dichalcogenides, have attracted tremendous amount of attention over the past decade due to their extraordinary thermal, electrical and optical…
One of the major limitation of standard top-down technologies used in today's neuromorphic engineering is their inability to map the 3D nature of biological brains. Here, we show how bipolar electropolymerization can be used to engineer 3D…
Memristors are considered key building blocks for the development of neuromorphic computing hardware. For ferroelectric memristors with a capacitor-like structure, the polarization direction modulates the height of the Schottky barriers --…
Two-dimensional material-based memristors have recently gained attention as components of future neuromorphic computing concepts. However, their surrounding atmosphere can influence their behavior. In this work, we investigate the resistive…
High-density phase change memory (PCM) storage is proposed for materials with multiple intermediate resistance states, which have been observed in 1$T$-TaS$_2$ due to charge density wave (CDW) phase transitions. However, the metastability…
Breaking the memory wall in advanced computing architectures will require complex 3D integration of emerging memory materials such as ferroelectrics-either within the back-end-of-line (BEOL) of CMOS front-end processes or through advanced…
We investigate hysteresis effects in a model for non-volatile memory devices. Two mechanisms are found to produce hysteresis effects qualitatively similar to those often experimentally observed in heterostructures of transition metal…