Related papers: Increasing Flash Memory Lifetime by Dynamic Voltag…
Over the past two decades, the storage capacity and access bandwidth of main memory have improved tremendously, by 128x and 20x, respectively. These improvements are mainly due to the continuous technology scaling of DRAM (dynamic…
Any learner with the ability to predict the future of a structured time-varying signal must maintain a memory of the recent past. If the signal has a characteristic timescale relevant to future prediction, the memory can be a simple shift…
The most important challenge in the scaling down of flash memory is its increased inter-cell interference (ICI). If side information about ICI is known to the encoder, the flash memory channel can be viewed as similar to Costa's "writing on…
Coherent optical memories will likely play an important role in future quantum communication networks. Among the different platforms, memories based on ladder-type orbital transitions in atomic gasses offer high bandwidth ($>100$ MHz),…
The NAND flash memory channel is corrupted by different types of noises, such as the data retention noise and the wear-out noise, which lead to unknown channel offset and make the flash memory channel non-stationary. In the literature,…
Resistive memories have limited lifetime caused by limited write endurance and highly non-uniform write access patterns. Two main techniques to mitigate endurance-related memory failures are 1) wear-leveling, to evenly distribute the writes…
Many cognitive processes rely on the ability of the brain to hold sequences of events in short-term memory. Recent studies have revealed that such memory can be read out from the transient dynamics of a network of neurons. However, the…
Development of memory devices with ultimate performance has played a key role in innovation of modern electronics. As a mainstream technology nonvolatile memory devices have manifested high capacity and mechanical reliability, however…
A reservoir computer is a way of using a high dimensional dynamical system for computation. One way to construct a reservoir computer is by connecting a set of nonlinear nodes into a network. Because the network creates feedback between…
To mitigate the ever-worsening Power Wall problem, more and more applications need to expand their power supply to the wide-voltage range including the near-threshold region. However, the read delay distribution of the SRAM cells under the…
The response of microbes to external signals is mediated by biochemical networks with intrinsic time scales. These time scales give rise to a memory that impacts cellular behaviour. Here we study theoretically the role of cellular memory in…
This paper presents a set of models dedicated to describe a flash storage subsystem structure, functions, performance and power consumption behaviors. These models cover a large range of today's NAND flash memory applications. They are…
This brief introduces a read bias circuit to improve readout yield of magnetic random access memories (MRAMs). A dynamic bias optimization (DBO) circuit is proposed to enable the real-time tracking of the optimal read voltage across…
For large scale distributed storage systems, flash memories are an excellent choice because flash memories consume less power, take lesser floor space for a target throughput and provide faster access to data. In a traditional distributed…
As dynamic random access memory (DRAM) and other current transistor-based memories approach their scalability limits, the search for alternative storage methods becomes increasingly urgent. Phase-change memory (PCM) emerges as a promising…
While containers efficiently implement the idea of operating-system-level application virtualization, they are often insufficient to increase the server utilization to a desirable level. The reason is that in practice many containerized…
3D NAND flash memory with advanced multi-level cell techniques provides high storage density, but suffers from significant performance degradation due to a large number of read-retry operations. Although the read-retry mechanism is…
Power systems with high penetration of variable renewable generation are vulnerable to periods with low generation. An alternative to retain high dispatchable generation capacity is electric energy storage that enables utilization of…
We realized an organic electrical memory device with a simple structure based on single layer pentacene film embedded between Al and ITO electrodes. The optimization of the thickness and deposition rate of pentacene resulted in a reliable…
3D NAND flash memory with advanced multi-level cell techniques provides high storage density, but suffers from significant performance degradation due to a large number of read-retry operations. Although the read-retry mechanism is…