Related papers: Increasing Flash Memory Lifetime by Dynamic Voltag…
Wireless systems comprised of rechargeable nodes have a significantly prolonged lifetime and are sustainable. A distinct characteristic of these systems is the fact that the nodes can harvest energy throughout the duration in which…
The memory function formalism is an important tool to evaluate the frequency dependent electronic conductivity. It is previously used within some approximations in the case of electrons interacting with various other degrees of freedom in…
In this paper, we develop optimal energy scheduling algorithms for $N$-user fading multiple-access channels with energy harvesting to maximize the channel sum-rate, assuming that the side information of both the channel states and energy…
There are currently a plurality of capacity theories of fading channels, including the ergodic capacity for fast fading channels and outage capacity for slow fading channels. However, analyses show that the outage capacity is a…
Flash memory is well-known for its inherent asymmetry: the flash-cell charge levels are easy to increase but are hard to decrease. In a general rewriting model, the stored data changes its value with certain patterns. The patterns of data…
This article considers the performance of digital communication systems transmitting messages over finite-state erasure channels with memory. Information bits are protected from channel erasures using error-correcting codes; successful…
Non-Volatile Memories (NVMs) such as Resistive RAM (RRAM) are used in neuromorphic systems to implement high-density and low-power analog synaptic weights. Unfortunately, an RRAM cell can switch its state after reading its content a certain…
We first consider an energy harvesting channel with fading, where only the transmitter harvests energy from natural sources. We bound the optimal long term throughput by a constant for a class of energy arrival distributions. The proposed…
One of the major challenges for long range, high speed Free-Space Optical (FSO) communication is turbulence induced beam wander. Beam wander causes fluctuations in the received intensity as well as crosstalk in mode division multiplexed…
With the broad recent research on ferroelectric hafnium oxide for non-volatile memory technology, depolarization effects in HfO2-based ferroelectric devices gained a lot of interest. Understanding the physical mechanisms regulating the…
Although NAND flash memory has achieved continuous capacity improvements via advanced 3D stacking and multi-level cell technologies, these innovations introduce new reliability challenges, particularly lateral charge spreading (LCS), absent…
The number and diversity of consumer devices are growing rapidly, alongside their target applications' memory consumption. Unfortunately, DRAM scalability is becoming a limiting factor to the available memory capacity in consumer devices.…
This dissertation rigorously characterizes many modern commodity DRAM devices and shows that by exploiting DRAM access timing margins within manufacturer-recommended DRAM timing specifications, we can significantly improve system…
To address the challenges in networked environments and control problems associated with complex nonlinear uncertain systems, this paper investigates the design of a membership-function-dependent (MFD) memory output-feedback (MOF)…
SSDs are currently replacing magnetic disks in many application areas. A challenge of the underlying flash technology is that data cannot be updated in-place. A block consisting of many pages must be completely erased before a single page…
In recent years, the energy consumption of computing systems has increased and a large fraction of this energy is consumed in main memory. Towards this, researchers have proposed use of non-volatile memory, such as phase change memory…
We report on a numerical investigation in which memory characteristics of double floating-gate (DFG) structure were compared to those of the conventional single floating-gate structure, including an interference effect between two cells. We…
Recurrent Neural Networks with Long Short-Term Memory (LSTM) make use of gating mechanisms to mitigate exploding and vanishing gradients when learning long-term dependencies. For this reason, LSTMs and other gated RNNs are widely adopted,…
The opening or closing mechanism of a voltage-gated ion channel is triggered by the potential difference crossing the cell membrane in the nervous system. Based on this picture, we model the ion channel as a nanoscale two-terminal ionic…
Flash memory-based processing-in-memory (flash-based PIM) offers high storage capacity and computational efficiency but faces significant reliability challenges due to noise in high-density multi-level cell (MLC) flash memories. Existing…