Related papers: Mobility versus quality in 2D semiconductor struct…
We study theoretically the relative importance of short-range disorder in determining the low-temperature 2D mobility in GaAs-based structures with respect to Coulomb disorder which is known to be the dominant disorder in semiconductor…
We theoretically revisit graphene transport properties as a function of carrier density, taking into account possible correlations in the spatial distribution of the Coulomb impurity disorder in the environment. We find that the charged…
Low temperature carrier transport properties in two-dimensional (2D) semiconductor systems can be theoretically well-understood within a mean-field type RPA-Boltzmann theory as being limited by scattering from screened Coulomb disorder…
We theoretically consider the carrier density dependence of low-temperature electrical conductivity in high-quality and low-disorder two-dimensional (2D) `metallic' electronic systems such as 2D GaAs electron or hole quantum wells or gated…
We study both monolayer and bilayer graphene transport properties taking into account the presence of correlations in the spatial distribution of charged impurities. In particular we find that the experimentally observed sublinear scaling…
We review the physics of charged impurities in the vicinity of graphene. The long-range nature of Coulomb impurities affects both the nature of the ground state density profile as well as graphene's transport properties. We discuss the…
We develop a theory for the maximum achievable mobility in modulation-doped 2D GaAs-AlGaAs semiconductor structures by considering the momentum scattering of the 2D carriers by the remote ionized dopants which must invariably be present in…
We present the results on the anomalous 2D transport behavior by employing Drude-Boltzmann transport theory and taking into account the realistic charge impurity scattering effects. Our results show quantitative agreement with the existing…
We provide a critical perspective on the collection of low-temperature transport phenomena in low-density two-dimensional semiconductor systems often referred to as the 2D metal-insulator transition. We discuss the physical mechanisms…
In materials with strong local Coulomb interactions, simple defects such as atomic substitutions strongly affect both macroscopic and local properties of the system. A nonmagnetic impurity, for instance, is seen to induce magnetism nearby.…
We theoretically consider the temperature and density dependent transport properties of semiconductor-based 2D carrier systems within the RPA-Boltzmann transport theory, taking into account realistic screened charged impurity scattering in…
We report on a systematic study of the density dependence of mobility in a low-density Carbon-doped (100) GaAs two-dimensional hole system (2DHS). At T= 50 mK, a mobility of 2.6 x 10^6 cm^2/Vs at a density p=6.2 x 10^10 cm^- was measured.…
We predict the existence of an intriguing "disorder by order" phenomenon in graphene transport where higher quality (and thus more ordered) samples, while having higher mobility at high carrier density, will manifest more strongly…
We present a gating scheme to separate even strong parallel conductance from the magneto-transport signatures and properties of a two-dimensional electron system. By varying the electron density in the parallel conducting layer, we can…
Controlling charged impurity disorder is a critical challenge for realizing the promise of topological insulator (TI) surfaces in devices. While doping is often used to tune the chemical potential, its impact on the fundamental disorder…
We examine the effects of disorder in one-dimensional systems. We link the case of a few impurities, typical of a short quantum wire, to that of a finite density of scatterers more appropriate for a long wire or a macroscopic system.…
Two-dimensional semiconductors are structurally ideal channel materials for the ultimate atomic electronics after silicon era. A long-standing puzzle is the low carrier mobility ({\mu}) in them as compared with corresponding bulk…
We calculate the temperature, density, and parallel magnetic field dependence of low temperature electronic resistivity in 2D high-mobility Si/SiGe quantum structures, assuming the conductivity limiting mechanism to be carrier scattering by…
We study experimentally and theoretically the effects of disorder, nonlinear screening, and magnetism in semiconductor heterostructures containing a $\delta$-layer of Mn, where the charge carriers are confined within a quantum well and…
Two-dimensional (2D) crystalline semiconductors hold promise for next-generation electronic devices due to its atomical thickness and consequent properties. Despite years of search, literature-reported 2D semiconductors commonly suffered…