Related papers: Current-Dependent Periodicities of Si(553)-Au
Room-temperature and low-temperature (77 K) scanning tunneling spectroscopy (STS) and voltage-dependent scanning tunneling microscopy (STM) data are used to study the local electronic properties of the quasi-one-dimensional Si(557)-Au…
We study electronic and topographic properties of the Si(335) surface, containing Au wires parallel to the steps. We use scanning tunneling microscopy (STM) supplemented by reflection of high energy electron diffraction (RHEED) technique.…
The atomic structure of well-ordered single steps on the Si(111)-\sqrt{3}\times\sqrt{3}-Sn surface and the dynamics of Sn adatoms in the vicinity of these steps was studied. The work was performed using low-temperature scanning tunneling…
We analyze both the stationary and time-dependent properties of molecular states in atomic chains on a surface, some of which are composed of atomic states decoupled from the substrate - a phenomenon analogous to dark states in quantum dot…
We introduce an orbital dependent electron tunneling model and implement it within the atom superposition approach for simulating scanning tunneling microscopy (STM) and spectroscopy (STS). Applying our method, we analyze the convergence…
The effects of sampling rate and total measurement time have been determined for single-point measurements of step fluctuations within the context of first-passage properties. Time dependent STM has been used to evaluate step fluctuations…
Explicit predictions for Scanning Tunneling Microscopy (STM) on interacting one-dimensional electron systems are made using the Luttinger liquid formalism. The STM current changes with distance from an impurity or boundary in a…
We introduce a novel control mode for Scanning Tunneling Microscopy (STM) that leverages di/dz feedback. By superimposing a high-frequency sinusoidal modulation on the control signal, we extract the amplitude of the resulting tunneling…
We have used a low-temperature scanning tunneling microscope (STM) to study the surface of heavily doped semiconductor InAs crystals. The crystals are cleaved in situ along the (110) plane. Apart from atomically flat areas, we also observe…
It has been shown that electron transitions, as measured in a scanning tunnelling microscope (STM), are related to chemical interactions in a tunnelling barrier. Here, we show that the shape and apparent height of subatomic features in an…
In a Scanning Tunneling Microscope (STM), when a tunneling electron treated as a point charge enters the barrier region between the tip and the sample, it induces image charges on the conducting surfaces, which modifies the shape of the…
We propose a new method for atomic-scale imaging of spatial current patterns in nanoscopic quantum networks by using scanning tunneling microscopy (STM). By measuring the current flowing from the STM tip into one of the leads attached to…
A scanning tunneling microscopy (STM) image of a hydrogen-adsorbed Si(001) surface is studied using first-principles electron-conduction calculation. The resultant STM image and scanning tunneling spectroscopy spectra are in agreement with…
We experimentally investigate the stochastic phase dynamics of planar Josephson junctions (JJs) and superconducting quantum interference devices (SQUIDs) defined in epitaxial InAs/Al heterostructures, and characterized by a large ratio of…
It is shown that in a structure consisting of a superconducting ring-shaped electrode overlapped by a normal metal contact through a thin oxide barrier, measurements of the tunnel current in magnetic field can probe persistent currents in…
{Analytical equations like Richardson-Dushman's or Shockley's provided a general, if simplified conceptual background, which was widely accepted in conventional electronics and made a fundamental contribution to advances in the field. In…
The average current of an overdamped Brownian particle moving along the axis of a three-dimensional periodic tube is investigated in the presence of a symmetric potential and a temporally symmetric unbiased external force. Reduction of the…
We study the local density of states at and around a substituting impurity and use these results to compute current versus bias characteristic curves of Scanning Tunneling Microscopy (STM) experiments done on the surface of graphene. This…
The transport properties of a simple model for a finite level structure (a molecule or a dot) connected to metal electrodes in an alternating current scanning tunneling microscope (AC-STM) configuration is studied. The finite level…
Quantum tunnelling of electrons can be confined to the sub-cycle time scale of strong light fields, contributing decisively to the extreme time resolution of attosecond science. Because tunnelling also enables atomic-scale spatial…