It has been shown that electron transitions, as measured in a scanning tunnelling microscope (STM), are related to chemical interactions in a tunnelling barrier. Here, we show that the shape and apparent height of subatomic features in an atomic force microscopy (AFM) experiment on Si(111) depend directly on the available electron states of the silicon surface and the silicon AFM tip. Simulations and experiments confirm that forces and currents show similar subatomic variations for tip-sample distances approaching the bulk bonding length.
@article{arxiv.cond-mat/0510348,
title = {Electron scattering in atomic force microscopy experiments},
author = {Linda Zotti and Werner A. Hofer and Franz J. Giessibl},
journal= {arXiv preprint arXiv:cond-mat/0510348},
year = {2009}
}