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Multiphoton absorption of wide band-gap semiconductors has shown great prospects in many fundamental researches and practical applications. With intensity-modulated femtosecond lasers by acousto-optic frequency shifters, photocurrents and…
Bottom up nanowires are attractive for realizing semiconductor devices with extreme heterostructures because strain relaxation through the nanowire sidewalls allows the combination of highly lattice mismatched materials without creating…
Interference phenomena render tailoring propagation of electromagnetic waves by controlling phases of several scattering channels. Huygens element, being a representative example of this approach, allows enhancement of the scattering from…
InGaN-based light emitting diodes (LEDs) are known to suffer from low electron and hole wavefunction overlap due to high piezoelectric field. Staggered InGaN quantum wells (QWs) have been proposed to increase the wavefunction overlap and…
A new type of high-energy binary system has been revealed by the INTEGRAL satellite. These sources are being unveiled by means of multi-wavelength optical, near- and mid-infrared observations. Among these sources, two distinct classes are…
We present spectra of a large sample of low-metallicity blue compact dwarf galaxies which exhibit broad components in their strong emission lines, mainly in Hbeta, [O III]4959, 5007 and Halpha. Twenty-three spectra have been obtained with…
The graphene-insulator-semiconductor-structured electron source has garnered significant attention due to its high electron emission efficiency and highly monochromatic electron emission. Graphene, with its c-axis orientation and…
Broadband active materials are pivotal for advancing emerging technologies spanning on-chip optical interconnects, artificial intelligence, quantum systems and precision metrology. Current semiconductor gain media face bandwidth…
The structures and dynamics of molecular, atomic, and ionized gases are studied around a low-luminosity active galactic nucleus (AGN) with a small ($2\times 10^6 M_\odot$) black hole using 3D radiation hydrodynamic simulations. We studied,…
We analyze the optical spectrum of type 1 QSO SDSS J1425+3231. This ob- ject is interesting since its narrow emission lines such as [O III]{\lambda}{\lambda}4959, 5007 are double- peaked, and the line structure can be modeled well by three…
InGaN-based visible LEDs find commercial applications for solid-state lighting and displays, but lattice mismatch limits the thickness of InGaN quantum wells that can be grown on GaN with high crystalline quality. Since narrower wells…
Integrated optical devices may replace bulk crystal or fiber based assemblies with a more compact and controllable photon pair and heralded single photon source and generate quantum light at telecommunications wavelengths. Here, we propose…
We present a unified model for the structure and appearance of accretion powered sources across their entire luminosity range from galactic X-ray binaries to luminous quasars, with emphasis on AGN and their phenomenology. Central to this…
We present the fabrication process of bright $GaAs$ quantum dot (QD) photon sources by non-deterministic embedding into broadband monolithic $Al_{0.15}Ga_{0.85}As$ microlens arrays on gold-coated substrates. Arrays of cylindrical…
Nonlinear frequency conversion unlocks technologies ranging from telecommunications to quantum computation; however, weak nonlinearities and architectures that resist miniaturization currently limit devices. Here, we combine a…
Colour centres in hexagonal boron nitride (hBN) have emerged as intriguing contenders for integrated quantum photonics. In this work, we present detailed photophysical analysis of hBN single emitters emitting at the blue spectral range. The…
In recent years, mono-layers and multi-layers of hexagonal boron nitride (hBN) have been demonstrated as host materials for localized atomic defects that can be used as emitters for ultra-bright, non-classical light. The origin of the…
ZnGeN$_2$ offers a low-cost alternative to InGaN with the potential for bandgap tuning to span the green gap using cation site ordering. The addition of oxygen on the anion site creates an additional degree of electronic tunability. Here,…
Some considerations of long wavelength and broadband radiation sources based on the emission of the coherent radiation by a train of short relativistic electron bunches moving in an open resonator along an arc-like or undulator trajectories…
Two-dimensional group III monochalcogenides have recently attracted quite attention for their wide spectrum of optical and electric properties, being promising candidates for optoelectronic and novel electrical applications, however in…