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III-nitride based full-color blue, green and red-light emitting diodes are critically important for a broad range of important applications. To date, however, green or red color III-nitride light emitters grown by conventional growth…
The optical properties of focused ion beam-engraved perfectly aligned and spatially controlled multi-quantum-well InGaN-GaN nanopillars were investigated. Crystalline MQW nanopillars with a diameter of 30 to 95 nm and high aspect ratios…
High-In-content InGaN quantum wells (QWs) in red light-emitting diodes (LEDs) are typically grown at low temperatures to ensure effective In incorporation. In this study, red LEDs based on bulk InGaN active region were demonstrated. The…
The photoluminescence of III-V wide band-gap semiconductors as InGaN is characterized by local intensity fluctuations, known as 'blinking points', that despite decades of research are not yet completely understood. In this letter we report…
We report here a monolithic photonic integration of light emitting diode (LED) with waveguide and photodetector to build a highly-integrated photonic system to perform functionalities on the GaN-on-silicon platform. Suspended p-n junction…
According to the classical AGN model, broad emission lines originate from the broad-line region (BLR) and are observable only when the attenuation by the dusty torus is small. However, we recently found several heavily-obscured ($A_V > 50$…
Microquasars (MQs) present emission over the whole spectrum, from radio wavelengths to gamma-rays. The microquasar spectral energy distribution is very complex, being a signature of the different physical processes that generate the…
We present the analysis of single epoch long slit spectra of the three brightest images of the gravitationally lensed system J1131-1231. These spectra provide one of the clearest observational evidence for differential micro-lensing of…
In a semiconductor illuminated by a strong terahertz field, optically excited electron-hole pairs can recombine to emit light in a broad frequency comb evenly spaced by twice the terahertz frequency. Such high-order terahertz sideband…
We report on two types of Raman laser sources emitting in the near and middle ultraviolet spectral ranges by the use of a solarization-resilient gas-filled inhibited-coupling (IC) hollow-core photonic-crystal fiber (HCPCF) with record low…
We analyse the optical properties of InAs$_{1-x}$Sb$_{x}$/Al$_{y}$In$_{1-y}$As quantum wells (QWs) grown by molecular beam epitaxy on relaxed Al$_{y}$In$_{1-y}$As metamorphic buffer layers (MBLs) using GaAs substrates. The use of…
The exploration of photonic systems for quantum information processing has generated widespread interest in multiple cutting-edge research fields. Photonic frequency encoding stands out as an especially viable approach, given its natural…
Coherent sources exploiting the stimulated emission of non-equilibrium quantum systems, i.e. gain media, have proven indispensable for advancing fundamental research and engineering. The operating electromagnetic bands of such coherent…
Single photons are resources needed for developing quantum networks QN. They distribute quantum information services across commercial optical fiber links and are key ingredient in developing quantum repeaters architectures. Currently, the…
UV-C LEDs pseudomorphically grown by MBE on bulk AlN substrates emitting at 265 nm are demonstrated. High current density up to 800 A/cm$^2$, 5 orders of on/off ratio, and low differential on-resistance of 2.6 m$\Omega\cdot$cm$^2$ at the…
Transformation of a table-top electron beam sustained 2.45 GHz RF discharge in rare gases into a self burning discharge has been observed for increasing RF-amplitude. Thereby, the emission spectrum undergoes significant changes in a wide…
The mid-infrared spectral range (2 to 20 \mu m) is of particular importance for chemistry, biology and physics as many molecules exhibit strong ro-vibrational fingerprints. Frequency combs - broad spectral bandwidth coherent light sources…
The ability to generate quantum emitters with reproducible properties in solid-state matrices is crucial for quantum technologies. Here, we show that a high density of close-to-identical single-photon emitters can be created in commercial…
We explore and systematically compare the morphological, structural and optical properties of GaN/(Al,Ga)N multiple quantum wells (MQWs) grown by plasma-assisted molecular beam epitaxy (PA-MBE) on freestanding GaN$(0001)$ and…
Single defect centers in layered hexagonal boron nitride (hBN) are promising candidates as single photon sources for quantum optics and nanophotonics applications. However, until today spectral instability hinders many applications. Here,…