Monochromatic Electron Emission from Graphene-Insulator-Semiconductor-Structured Electron Source Utilizing Interference Efficets
Abstract
The graphene-insulator-semiconductor-structured electron source has garnered significant attention due to its high electron emission efficiency and highly monochromatic electron emission. Graphene, with its c-axis orientation and well-defined interlayer spacing, exhibits electron interference effects that can influence the properties of emitted electrons. In this work, motion of an electron wave packet is numerically calculated to discuss the energy spread of the zero-order and first-order diffracted electron waves by mono- and multilayer graphene. It is found that the effects of multiple reflections of electron between the layers broaden the energy spread especially for the incident energy of 13.4 eV, and that highly monochromatic electron emission can be achieved by using diffracted electron wave with a small aperture.
Keywords
Cite
@article{arxiv.2511.02330,
title = {Monochromatic Electron Emission from Graphene-Insulator-Semiconductor-Structured Electron Source Utilizing Interference Efficets},
author = {Takao Koichi and Shogo Kawashima and Hiroshi Miyake and Satoshi Abo and Fujio Wakaya and Masayoshi Nagao and Katsuhisa Murakami},
journal= {arXiv preprint arXiv:2511.02330},
year = {2025}
}
Comments
9 pages, 10 figures