Related papers: High-performance ferroelectric memory based on ful…
Ferromagnets with high spin polarization are known to be valuable for spintronics--a research field that exploits the spin degree of freedom in information technologies. Recently, antiferromagnets have emerged as promising alternative…
We have experimentally demonstrated the effectiveness of beta-gallium oxide (beta-Ga2O3) ferroelectric fin field-effect transistors (Fe-FinFETs) for the first time. Atomic layer deposited (ALD) hafnium zirconium oxide (HZO) is used as the…
The interest in the ferroelectric non-volatile memory as a candidate for low power consumption electronic memories was raised after the discovery of ferroelectricity in hafnium oxide. Doping by different elements of hafnia films allows…
Straintronic magneto-tunneling junction (s-MTJ) switches, whose resistances are controlled with voltage-generated strain in the magnetostrictive free layer of the MTJ, are extremely energy-efficient switches that would dissipate a few aJ of…
The continuous development of superconducting electronics is encouraging several studies on hybrid Josephson junctions (JJs) based on superconductor/ferromagnet/superconductor (SFS) heterostructures, as either spintronic devices or…
The ferroelectric field-effect transistor (Fe-FET) is a three-terminal semiconducting device first introduced in the 1950s. Despite its potential, a significant boost in Fe-FET research occurred about ten years ago with the discovery of…
The influence of depolarizing field on the magnitude and stability of a uniform polarization in ferroelectric capacitors and tunnel junctions is studied using a nonlinear thermodynamic theory. It is predicted that, in heterostructures…
A memory window of ferroelectric field-effect transistors (FeFETs), defined as a separation of the HIGH-state and the LOW-state threshold voltages, is an important measure of the FeFET memory characteristics. In this study, we theoretically…
Ferroelectric tunnel junction devices based on ferroelectric thin films of solid solutions of hafnium dioxide can enable CMOS integration of ultra-low power ferroelectric devices with potential for memory and emerging computing schemes such…
Interfacial ferroelectricity offers a promising platform for ultrafast, low-power memory devices. While previous studies have demonstrated the importance of domain wall in polarization switching, the coexistence of various domain wall types…
Ferroelectrics offer a promising materials platform to realize energy-efficient non-volatile memory technology with the FeFET-based implementations being one of the most area-efficient ferroelectric memory architectures. However, the FeFET…
A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO$_4$ layer is fabricated at a low thermal budget (~375$^\circ$C), enabling BEOL processes and CMOS integration. The devices show suitable properties…
The tunnel magnetoresistance (TMR) effect observed in magnetic tunnel junctions (MTJs) is commonly used in many spintronic applications because the effect can easily convert from local magnetic states to electric signals in a wide range of…
The exponential growth of edge artificial intelligence demands material-focused solutions to overcome energy consumption and latency limitations when processing real-time temporal data. Physical reservoir computing (PRC) offers an…
Stochastic magnetic tunnel junctions (sMTJ) using low-barrier nanomagnets have shown promise as fast, energy-efficient, and scalable building blocks for probabilistic computing. Despite recent experimental and theoretical progress, sMTJs…
Although ferroelectric systems inherently exhibit binary switching behavior, recent advances in analog memory device have spurred growing interest in achieving continuous memory states. In this work, we demonstrate ferroelectric amplitude…
We study tunnel junctions consisting of a two-dimensional ferroelectric (FE) material sandwiched between graphene electrodes. We formulate a theory for the interplay of the FE polarization and induced free charges in such devices, taking…
Future generations of magnetic random access memory demand magnetic tunnel junctions that can provide simultaneously high magnetoresistance, strong retention, low switching energy and small cell size below 10nm. Here we study perpendicular…
We report on tunnelling magnetoresistance (TMR), current-voltage (IV) characteristics and low frequency noise in epitaxially grown Fe(110)/MgO(111)/Fe(110) magnetic tunnel junctions (MTJs) with dimensions from 2x2 to 20x20 um2. The…
We investigate spin-dependent conductance across a magnetic tunnel junction (MTJ) including a ferromagnetic insulating barrier. The MTJ consists of two half-metallic ferromagnetic La2/3Sr1/3MnO3 (LSMO) manganites as electrodes and La2NiMnO6…